Toward 22 nm: fast and effective intrafield monitoring and optimization of process windows and critical dimension uniformity

Bencher, Chris; Finders, Jo; Englard, Ilan; Cohen, Yaron; Sagiv, Amir; Ben-Yishai, Michael; Mangan, Shmoolik; Dai, Huixiong; Ngai, Chris; Dotan, Kfir; Knops, Roel; Mouraille, Orion; Mos, Evert; Kremer, Alexander

doi:doi:10.1117/1.3641409

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Journal of Micro/Nanolithography, MEMS, and MOEMS / Volume 10 / Issue 4 / Articles

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Toward 22 nm: fast and effective intrafield monitoring and optimization of process windows and critical dimension uniformity

J. Micro/Nanolith. MEMS MOEMS 10, 043003 (Oct 06, 2011); http://dx.doi.org/10.1117/1.3641409

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Abstract

References (9)

Citing Articles (2)

Chris Bencher, Huixiong Dai, Chris Ngai, and Kfir Dotan

Applied Materials, Inc., 3050 Bowers Avenue, Santa Clara, California 95054-3299

Jo Finders, Roel Knops, Orion Mouraille, Evert Mos, and Alexander Kremer

ASML Netherlands B.V., De Run 6501, 5504 DR, Veldhoven, The Netherlands

Ilan Englard

Applied Materials Europe B.V., Spicalaan 57, 2132 JG, Hoofddorp, The Netherlands

Yaron Cohen, Amir Sagiv, Michael Ben-Yishai, and Shmoolik Mangan

Applied Materials Israel Ltd., 9 Oppenheimer St.76701 Rehovot, Israel

ITRS lithography's stringent specifications for the 22 nm node are a major challenge for the semiconductor industry. With the EUV point insertion at 16 nm node, ArF lithography is expected to reach its fundamental limits. The prevailing view of holistic lithography methods, together with double patterning techniques, has targeted bringing lithography performance toward the 22 nm node (i.e., closer to the immersion scanner resolution limit) to an acceptable level. At this resolution limit, a mask is the primary contributor of systematic errors within the wafer intrafield domain. As the ITRS critical dimension uniformity (CDU) specification shrinks, it would be crucial to monitor the mask static and dynamic critical dimension (CD) changes in the fab, and use the data to control the intrafield CDU performance in a most efficient way. Furthermore, optimization and monitoring of process windows (PW) becomes more critical due to the presence of mask three-dimensional effects. This paper will present double patterning inter- and intrafield data, for CDU and PW monitoring and optimization, measured by Applied Materials’ mask inspection and CD-SEM tools. Special emphasis was given to speed and effectiveness of the inspection for a production environment.

History

Received Apr 25, 2011
Accepted Aug 29, 2011
Revised Jul 12, 2011
Published online Oct 06, 2011

Digital Object Identifier

http://dx.doi.org/10.1117/1.3641409

Citation

Chris Bencher, Jo Finders, Ilan Englard, Yaron Cohen, Amir Sagiv, Michael Ben-Yishai, Shmoolik Mangan, Huixiong Dai, Chris Ngai, Kfir Dotan, Roel Knops, Orion Mouraille, Evert Mos and Alexander Kremer, "Toward 22 nm: fast and effective intrafield monitoring and optimization of process windows and critical dimension uniformity", J. Micro/Nanolith. MEMS MOEMS 10, 043003 (Oct 06, 2011); http://dx.doi.org/10.1117/1.3641409