Extreme ultraviolet interference lithography at the Paul Scherrer Institut

Auzelyte, Vaida; Dais, Christian; Farquet, Patrick; Grützmacher, Detlev; Heyderman, Laura J.; Luo, Feng; Olliges, Sven; Padeste, Celestino; Sahoo, Pratap K.; Thomson, Tom; Turchanin, Andrey; David, Christian; Solak, Harun H.

doi:doi:10.1117/1.3116559

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Journal of Micro/Nanolithography, MEMS, and MOEMS / Volume 8 / Issue 2 / Special Section on Extreme-Ultraviolet Interference Lithography

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Extreme ultraviolet interference lithography at the Paul Scherrer Institut

J. Micro/Nanolith. MEMS MOEMS 8, 021204 (Apr 27, 2009); doi:10.1117/1.3116559

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Abstract

References (72)

Citing Articles (15)

Vaida Auzelyte, Christian Dais, Patrick Farquet, Laura J. Heyderman, Feng Luo, Celestino Padeste, Pratap K. Sahoo, and Christian David

Paul Scherrer Institut, Laboratory for Micro- and Nanotechnology, Villigen 5232, Switzerland

Detlev Grützmacher

Institute of Bio- and Nanosystems 1, Research Center of Jülich, 52425 Jülich, Germany

Sven Olliges

Swiss Federal Institute of Technology (ETH) Zurich, Laboratory for Nanometallurgy, Department of Materials, Wolfgang-Pauli-Strausse 10, Zurich, CH-8093, Switzerland

Tom Thomson

University of Manchester Oxford Road, School of Computer Science, Kilburn Building, Manchester M13 9PL, United Kingdom

Andrey Turchanin

University of Bielefeld, Faculty of Physics, Physics of Supermolecular Systems, D-33615 Bielefeld, Germany

Harun H. Solak

Paul Scherrer Institut, Laboratory for Micro- and Nanotechnology and Eulitha AG, Villigen 5232, Switzerland

We review the performance and applications of an extreme ultraviolet interference lithography (EUV-IL) system built at the Swiss Light Source of the Paul Scherrer Institut (Villigen, Switzerland). The interferometer uses fully coherent radiation from an undulator source. 1-D (line/space) and 2-D (dot/hole arrays) patterns are obtained with a transmission-diffraction-grating type of interferometer. Features with sizes in the range from one micrometer down to the 10-nm scale can be printed in a variety of resists. The highest resolution of 11-nm half-pitch line/space patterns obtained with this method represents a current record for photon based lithography. Thanks to the excellent performance of the system in terms of pattern resolution, uniformity, size of the patterned area, and the throughput, the system has been used in numerous applications. Here we demonstrate the versatility and effectiveness of this emerging nanolithography method through a review of some of the applications, namely, fabrication of metallic and magnetic nanodevice components, self-assembly of Si/Ge quantum dots, chemical patterning of self-assembled monolayers (SAM), and radiation grafting of polymers.

History

Received Oct 26, 2008
Accepted Mar 02, 2009
Revised Feb 05, 2009
Published online Apr 27, 2009

Permalink

http://dx.doi.org/10.1117/1.3116559

Citation

Vaida Auzelyte, Christian Dais, Patrick Farquet, Detlev Grützmacher, Laura J. Heyderman, Feng Luo, Sven Olliges, Celestino Padeste, Pratap K. Sahoo, Tom Thomson, Andrey Turchanin, Christian David and Harun H. Solak, "Extreme ultraviolet interference lithography at the Paul Scherrer Institut", J. Micro/Nanolith. MEMS MOEMS 8, 021204 (Apr 27, 2009); doi:10.1117/1.3116559