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Extreme ultraviolet interference lithography as applied to photoresist studies
J. Micro/Nanolith. MEMS MOEMS 8, 021205 (May 05, 2009); http://dx.doi.org/10.1117/1.3124188
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Add to FacebookExtreme ultraviolet interference lithography (EUV IL), especially in combination with tool-independent metrics for resist performance, is a powerful technique for judging progress with current resists, the potential of new materials and studying the fundamentals of resist performance. We provide an overview of how EUV IL is applied for resist testing and early material selections. Also discussed are examples of EUV IL being used to gain fundamental understanding for resist characterization under EUV imaging conditions.
© 2009 Society of Photo-Optical Instrumentation Engineers
History
Received Oct 16, 2008
Accepted Mar 17, 2009
Revised Mar 06, 2009
Published online May 05, 2009
Accepted Mar 17, 2009
Revised Mar 06, 2009
Published online May 05, 2009
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Citation
Roel Gronheid and Michael J. Leeson, "Extreme ultraviolet interference lithography as applied to photoresist studies",
J. Micro/Nanolith. MEMS MOEMS 8, 021205 (May 05, 2009); http://dx.doi.org/10.1117/1.3124188
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