Cathodoluminescence and photoluminescence comparative study of erbium-doped silicon-rich silicon oxide

Cueff, Sébastien; Labbé, Christophe; Dierre, Benjamin; Cardin, Julien; Khomenkova, Larysa; Fabbri, Filippo; Sekiguchi, Takashi; Rizk, Richard

doi:doi:10.1117/1.3549701

GENERAL INFORMATION

You are not logged in Logged Out Log In

Journal of Nanophotonics / Volume 5 / Special Section on Nanostructured Thin Films: Fabrication, Characterization, and Application

Previous Article | Next Article

Cathodoluminescence and photoluminescence comparative study of erbium-doped silicon-rich silicon oxide

J. Nanophoton. 5, 051504 (Feb 04, 2011); http://dx.doi.org/10.1117/1.3549701

Alerts
- Alert Me When Cited
- Alert Me When Corrected
Tools
Share
- Email Abstract
- Connotea
- CiteULike
- del.icio.us
- BibSonomy
- Tweet this Article
- Add to Facebook

Abstract

References (32)

Sébastien Cueff, Christophe Labbé, Julien Cardin, Larysa Khomenkova, and Richard Rizk

Université de Caen, Centre de Recherche sur les Ions, les Matériaux et la Photonique (CIMAP), ENSICAEN, CNRS, CEA/IRAMIS, 14050 CAEN cedex, France

Benjamin Dierre, Filippo Fabbri, and Takashi Sekiguchi

National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan

We present a study on erbium (Er)-doped silicon (Si)-rich silicon oxide thin films grown by the magnetron cosputtering of three confocal cathodes according to the deposition temperature and the annealing treatment. It is shown that, through a careful tuning of both deposition and annealing temperatures, it is possible to engineer the fraction of agglomerated Si that may play the role of sensitizer toward Er ions. To investigate the different emitting centers present within the films according to the fraction of agglomerated Si, a cathodoluminescence experiment was made. We observe in all samples contributions from point-defect centers due to some oxygen vacancies and generally known as silicon-oxygen deficient centers (SiODC), at around 450–500 nm. The behavior of such contributions suggests the possible occurrence of an energy transfer from the SiODCs toward Er³⁺ ions. Photoluminescence experiments were carried out to characterize the energy transfer from Si nanoclusters toward Er³⁺ ions with a nonresonant wavelength (476 nm) that is unable to excite SiODCs and then exclude any role of these centers in the energy transfer process for the PL experiments. Accordingly, it is shown that structural differences have some effects on the optical properties that lead to better performance for high-temperature deposited material. This aspect is illustrated by the Er-PL efficiency that is found higher for 500°C-deposited, when compared to that for RT-deposited sample. Finally, it is shown that the Er-PL efficiency is gradually increasing as a function of the fraction of agglomerated silicon.

History

Received Oct 11, 2010
Accepted Dec 28, 2010
Revised Dec 22, 2010
Published online Feb 04, 2011
Corrected Mar 03, 2011

Digital Object Identifier

http://dx.doi.org/10.1117/1.3549701

Citation

Sébastien Cueff, Christophe Labbé, Benjamin Dierre, Julien Cardin, Larysa Khomenkova, Filippo Fabbri, Takashi Sekiguchi and Richard Rizk, "Cathodoluminescence and photoluminescence comparative study of erbium-doped silicon-rich silicon oxide", J. Nanophoton. 5, 051504 (Feb 04, 2011); http://dx.doi.org/10.1117/1.3549701