Lithography-free glass surface modification by self-masking during dry etching

Hein, Eric; Fox, Dennis; Fouckhardt, Henning

doi:doi:10.1117/1.3586787

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Journal of Nanophotonics / Volume 5 / Special Section on Nanoengineering: Fabrication, Properties, Optics, and Devices

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Lithography-free glass surface modification by self-masking during dry etching

J. Nanophoton. 5, 051703 (May 05, 2011); http://dx.doi.org/10.1117/1.3586787

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Abstract

References (26)

Eric Hein, Dennis Fox, and Henning Fouckhardt

Kaiserslautern University of Technology, Physics Department, Integrated Optoelectronics and Microoptics Research Group, Gottlieb-Daimler-Strasse, Kaiserslautern Rheinland-Pfalz 67653, Germany

Glass surface morphologies with defined shapes and roughness are realized by a two-step lithography-free process: deposition of an ∼10-nm-thin lithographically unstructured metallic layer onto the surface and reactive ion etching in an Ar/CF₄ high-density plasma. Because of nucleation or coalescence, the metallic layer is laterally structured during its deposition. Its morphology exhibits islands with dimensions of several tens of nanometers. These metal spots cause a locally varying etch velocity of the glass substrate, which results in surface structuring. The glass surface gets increasingly rougher with further etching. The mechanism of self-masking results in the formation of surface structures with typical heights and lateral dimensions of several hundred nanometers. Several metals, such as Ag, Al, Au, Cu, In, and Ni, can be employed as the sacrificial layer in this technology. Choice of the process parameters allows for a multitude of different glass roughness morphologies with individual defined and dosed optical scattering.

History

Received Sep 29, 2010
Accepted Apr 14, 2011
Revised Apr 12, 2011
Published online May 05, 2011

Digital Object Identifier

http://dx.doi.org/10.1117/1.3586787

Citation

Eric Hein, Dennis Fox and Henning Fouckhardt, "Lithography-free glass surface modification by self-masking during dry etching", J. Nanophoton. 5, 051703 (May 05, 2011); http://dx.doi.org/10.1117/1.3586787