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Directional and magnetic field enhanced emission of Cu-doped ZnO nanowires/p-GaN heterojunction light-emitting diodes
J. Nanophoton. 5, 051816 (Jul 08, 2011); http://dx.doi.org/10.1117/1.3604783
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Add to FacebookThe electrochemical deposition technique was used for the preparation of Cu-doped ZnO-nanowire-based emitters. Nanowires of high structural and optical quality were epitaxially grown on p-GaN single crystalline film substrates. We found that the emission is directional with a wavelength that is tuned and redshifted toward the visible region by doping with Cu in nanowires. Furthermore, Cu-doped ZnO-nanowires show an enhancement of the transition probability under magnetic field.
© 2011 Society of Photo-Optical Instrumentation Engineers (SPIE)
History
Received Jan 31, 2011
Accepted Jun 07, 2011
Revised Jun 03, 2011
Published online Jul 08, 2011
Accepted Jun 07, 2011
Revised Jun 03, 2011
Published online Jul 08, 2011
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Citation
Bruno Viana, Oleg Lupan and Thierry Pauporté, "Directional and magnetic field enhanced emission of Cu-doped ZnO nanowires/p-GaN heterojunction light-emitting diodes",
J. Nanophoton. 5, 051816 (Jul 08, 2011); http://dx.doi.org/10.1117/1.3604783
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