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Scattering effects in resonant magnetotunneling in InAs-based heterostructures

J. Nanophoton. 5, 051819 (Jul 19, 2011); http://dx.doi.org/10.1117/1.3611018

Goran Isić, Dragan Indjin, Zoran Ikonić, and Paul Harrison

University of Leeds, School of Electronic and Electrical Engineering, Leeds LS2 9JT, United Kingdom

University of Belgrade, Institute of Physics, Pregrevica 118, 11080 Belgrade, Serbia

Vitomir Milanović and Jelena Radovanović

University of Belgrade, School of Electrical Engineering, Bulevar kralja Aleksandra 73, 11120 Belgrade, Serbia

Electron transport through an InGaAs resonant tunneling structure with Rashba spin-orbit interaction and magnetic field parallel to the growth direction was studied theoretically. A nonequilibrium Green's function model was used, wherein interface roughness and longitudinal optical phonon scattering are treated in the self-consistent first Born approximation. The model predicts the main features of the two-dimensional magnetopolaron density of states and the secondary peaks in the I-V curve due to both resonant elastic and inelastic scattering. The I-V curves were studied at magnetic fields around the magnetophonon resonance and the elastic and inelastic contributions identified. At these fields (5 to 7 T), the current spin polarization was found to be dominated by the Zeeman effect and significant even in the presence of scattering events.

© 2011 Society of Photo-Optical Instrumentation Engineers (SPIE)

History
Received Feb 02, 2011
Accepted Jun 22, 2011
Revised Apr 28, 2011
Published online Jul 19, 2011
Citation
Goran Isić, Dragan Indjin, Vitomir Milanović, Jelena Radovanović, Zoran Ikonić and Paul Harrison, "Scattering effects in resonant magnetotunneling in InAs-based heterostructures", J. Nanophoton. 5, 051819 (Jul 19, 2011); http://dx.doi.org/10.1117/1.3611018

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