GENERAL INFORMATION
Thin-film growth dynamics with shadowing and re-emission effects
J. Nanophoton. 5, 052501 (Mar 04, 2011); http://dx.doi.org/10.1117/1.3543822
Growth dynamics of thin-films involves both shadowing and re-emission effects. Shadowing can originate from obliquely incident atoms being preferentially deposited on hills of the surface, which leads to a long range geometrical effect, as well as from an atomic shadowing process that can occur even during normal angle deposition. Re-emission effect is a result of nonsticking atoms, which can bounce off from hills and deposit on valleys of the surface. In the case of an energetic incident flux, re-emission can also originate from a resputtering process that includes a surface atom being knocked off by an incident ion/atom followed by redeposition to another surface point. Due to their long-range nonlocal nature, both the shadowing effect (which tries to roughen the surface) and re-emission effect (which has a smoothening effect) have been shown to be more dominant over local effects such as surface diffusion, and have been proven to be critical processes in accurately determining the dynamic evolution of surface roughness. Recent Monte Carlo simulation methods that involve shadowing, re-emission, surface diffusion, and noise effects successfully predicted many experimentally relevant surface roughness evolution results reported in the literature. For example, root-mean-square surface roughness (ω) of Monte Carlo simulated thin-films have evolved with time t according to a power law behavior ω ∼ tβ, with β values ranging from about 0 to 1 for a growth with strong re-emission effects (i.e., low sticking coefficients) and a growth with dominant shadowing effects (i.e., with high sticking coefficients), respectively. Potential future thin-film growth modeling studies are also discussed. These include advanced simulation approaches that can incorporate atomistic details of physical and chemical processes and a recently developed network growth model that can potentially capture some universal aspects of thin-film growth dynamics independent of the details of growth process.
© 2011 Society of Photo-Optical Instrumentation Engineers (SPIE)
History
Received Apr 05, 2010
Accepted Dec 15, 2010
Revised Dec 13, 2010
Published online Mar 04, 2011
Accepted Dec 15, 2010
Revised Dec 13, 2010
Published online Mar 04, 2011
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Citation
Tansel Karabacak, "Thin-film growth dynamics with shadowing and re-emission effects",
J. Nanophoton. 5, 052501 (Mar 04, 2011); http://dx.doi.org/10.1117/1.3543822
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RELATED CONTENT
- D. L. Smith, Thin-Film Deposition: Principles and Practice, McGraw-Hill, New York (1995) doi:10.1063/1.1618944APPLAB000083000015003096000001. [ISI]
- P. Meakin, Fractals, Scaling, and Growth Far from Equilibrium, Cambridge University Press, Cambridge, England (1998).
- A.-L. Barabasi and H. E. Stanley, Fractal Concepts in Surface Growth, Cambridge University, Cambridge, England (1995).
- T.-M. Lu, Y.-P. Zhao, J. T. Drotar, T. Karabacak, and G.-C. Wang, “Novel mechanisms of the growth morphology thin-films,” Mat. Res. Soc. Symp. Proc. 749, 3–8 (2003).
- N. O. Young and J. Kowal, “Optically active fluorite films,” Nature (London) 183, 104–105 (1959). [ISI]
- T. Motohiro and Y. Taga, “Thin-film retardation plate by oblique deposition,” Appl. Opt. 28, 2466–2482 (1989).
- R. M. Azzam, “Chiral thin solid films: Method of deposition and applications,” Appl. Phys. Lett. 61, 3118–3120 (1992)APPLAB000061000026003118000001.
- K. Robbie, M. J. Brett, and A. Lakhtakia, “Chiral sculptured thin-films,” Nature (London) 384, 616–616 (1996).
- K. Robbie, G. Beydaghyan, T. Brown, C. Dean, J. Adams, and C. Buzea, “Ultrahigh vacuum glancing angle deposition system for thin-films with controlled three-dimensional nanoscale structure,” Rev. Sci. Instrum. 75, 1089–1097 (2004)RSINAK000075000004001089000001. [ISI]
- T. Karabacak and T.-M. Lu, “Shadowing growth and physical self-assembly of 3D columnar structures,” in Handbook of Theoretical and Computational Nanotechnology, M. Rieth and W. Schommers, Eds., chap. 69, p. 729, American Scientific Publishers, Stevenson Ranch, CA (2005).
- T. Karabacak, G.-C. Wang, and T.-M. Lu, “Physical self-assembly and the nucleation of 3D nanostructures by oblique angle deposition,” J. Vac. Sci. Technol. A 22, 1778–1784 (2004)JVTAD6000022000004001778000001.
- A. Lakhtakia and R. Messier, Sculptured Thin-Films: Nanoengineered Morphology and Optics, SPIE Press, Bellingham, WA (2005).
- See, for example, Ref. 3, page 231.
- R. A. Roy and R. Messier, “Evolutionary growth development in SiC sputtered films,” Mater. Res. Soc. Proc. 38, 363–370 (1985).
- R. A. Roy and R. Messier, “Quantitative analysis of thin-film morphology evolution,” in High Performance Ceramic Films and Coatings, P. Vincenzini, Ed., Elsevier, Amsterdam, Netherlands (1991).
- J. A. Thornton, “Influence of apparatus geometry and deposition conditions on the structure and topography of thick sputtered coatings,” J. Vac. Sci. Tech. 11, 666–670 (1974)JVSTAL000011000004000666000001.
- J. A. Thornton, “High rate thick film growth,” Annu. Rev. Mater. Sci. 7, 239–260 (1977).
- R. Messier, A. P. Giri, and R. A. Roy, “Revised structure zone model for thin-film physical structure,” J. Vac. Sci. Technol. A 2, 500–503 (1984)JVTAD6000002000002000500000001.
- F. Family and T. Vicsek, “Scaling of the active zone in the Eden process on percolation networks and the ballistic deposition model,” J. Phys. A 18, L75–81 (1985).
- F. Family, “Scaling of rough surfaces: effects of surface diffusion,” J. Phys. A 19, L441–446 (1986).
- M. Pelliccione, T. Karabacak, and T.-M. Lu, “Breakdown of dynamic scaling in surface growth under shadowing,” Phys. Rev. Lett. 96, 146105 (2006). [MEDLINE]
- M. Pelliccione, T. Karabacak, C. Gaire, G.-C. Wang, and T.-M. Lu, “Mound formation in surface growth under shadowing,” Phys. Rev. B 74, 125420 (2006).
- M. Pelliccione and T.-M Lu, Evolution of Thin-Film Morphology: Modeling and Simulations, Springer, New York (2007).
- Y.-P. Zhao, G.-C. Wang, and T.-M. Lu, Characterization of Amorphous and Crystalline Rough Surfaces: Principles and Applications, Academic Press, San Diego (2001).
- F. Family and T. Viscek, Dynamics of Fractal Surfaces, World Scientific, Singapore (1991).
- T. Karabacak, H. Guclu, and M. Yuksel, “Network behavior in thin-film growth dynamics,” Phys. Rev. B 79, 195418 (2009).
- R. P. U. Karunasiri, R. Bruinsma, and J. Rudnick, “Thin-film growth and the shadow instability,” Phys. Rev. Lett. 62, 788–791 (1989).
- T. Karabacak, Y.-P. Zhao, G.-C. Wang, and T.-M. Lu, “Growth front roughening in amorphous silicon films by sputtering,” Phys. Rev. B 64, 085323 (2001).
- T. Karabacak, Y.-P. Zhao, G.-C. Wang, and T.-M. Lu, “Growth front roughening in silicon nitride films by PECVD,” Phys. Rev. B 66, 075329 (2002).
- S. Hamaguchi and S. M. Rossnagel, “Simulations of trench-filling profiles under ionized magnetron sputter metal deposition,” J. Vac. Sci. Technol. B 13, 183–191 (1995)JVTBD9000013000002000183000001.
- S. Hamaguchi and S. M. Rossnagel, “Liner conformality in ionized magnetron sputter metal deposition processes,” J. Vac. Sci. Technol. B 14, 2603–2608 (1996)JVTBD9000014000004002603000001.
- C. A. Nichols, S. Hamaguchi, and S. M. Rossnagel, “Ionized physical vapor deposition of Cu for high aspect ratio damascene trench fill applications,” J. Vac. Sci. Technol. B 14, 3270–3275 (1996)JVTBD9000014000005003270000001.
- X. Xu and D. W. Goodman, “Metal deposition onto oxides: An unusual low initial sticking probability for copper on Si02,” Appl. Phys. Lett. 61, 1799–1801 (1992)APPLAB000061000015001799000001. [ISI]
- E. M. van Veldhuizen and F. J. de Hoog, “Analysis of a Cu-Ne hollow cathode glow discharge at intermediate currents,” J. Phys. D: Appl. Phys. 17, 953–968 (1984). [Inspec] [ISI]
- A. Bogaerts, J. Naylor, M. Hatcher, W. J. Jones, and R. Mason, “Influence of sticking coefficients on the behavior of sputtered atoms in an argon glow discharge: Modeling and comparison with experiment,” J. Vac. Sci. Technol. A 16, 2400–2410 (1998)JVTAD6000016000004002400000001. [ISI]
- K. Obara, Z. Fu, M. Arima, T. Yamada, T. Fujikawa, N. Imamura, and N. Terada, “Collision processes between sputtered particles on high speed rotating substrate and atomic mass dependence of sticking coefficient,” J. Crystal Growth 237–239, 2041–2045 (2002). [Inspec]
- S. Migita, K. Sakai, H. Ota, Z. Mori, and R. Aoki, “The influence of Bi-sticking coefficient in the growth of Bi(2212) thin-film by ion beam sputtering,” Thin Solid Films 281–282, 510–512 (1996). [ISI]
- A. Bogaerts, E. Wagner, B. W. Smith, J. D. Winefordner, D. Pollmann, W. W. Harrison, and R. Gijbels, “Three-dimensional density profiles of sputtered atoms and ions in a direct current glow discharge: experimental study and comparison with calculations,” Spectrochim. Acta Part B 52, 205–218 (1997). [ISI]
- A. J. Toprac, B. P. Jones, J. Schlueter, and T. S. Cale, “Modeling of collimated titanium nitride physical vapor deposition using a combined specular-diffuse formulation,” Mat. Res. Soc. Symp. Proc. 355, 575–580 (1995).
- O. Yamazaki, K. Iyanagi, S. Takagi, and K. Nanbu, “Modeling of Cu transport in sputtering using a Monte Carlo simulation,” Jpn. J. Appl. Phys. 41, 1230–1234 (2002).
- D. Liu, S. K. Dew, M. J. Brett, T. Smy, and W. Tsai, “Compositional variations in Ti-W films sputtered over topographical features,” J. Appl. Phys. 75, 8114–8120 (1994)JAPIAU000075000012008114000001.
- R. J. Buss, P. Ho, W. G. Breiland, and M. E. Coltrin, “Reactive sticking coefficients of silane on silicon,” in Deposition and Growth: Limits for Microelectronics, G. W. Rubloff, Ed, AIP Conf. Proc. 167, 34–42 (1988).
- R. J. Buss, P. Ho, W. G. Breiland, and M. E. Coltrin, “Reactive sticking coefficients for silane and disilane on polycrystalline silicon,” J. Appl. Phys. 63, 2808–2819 (1988)JAPIAU000063000008002808000001.
- C. C. Tsai, J. G. Shaw, B. Wacker, and J. C. Knights, “Film growth mechanisms of amorphous silicon in diode and triode glow discharge systems,” Mat. Res. Soc. Symp. Proc. 95, 219–224 (1987).
- J. Perrin and T. Broekhuizen, “Modelling of Hg(3P1) photosensitization of SiH4 and surface reactions of the SiH3 radical,” Mat. Res. Soc. Symp. Proc. 75, 201–208 (1987).
- J. Perrin and T. Broekhuizen, “Surface reaction and recombination of the SiH3 radical on hydrogenated amorphous silicon,” Appl. Phys. Lett. 50, 433–435 (1987)APPLAB000050000008000433000001.
- R. Robertson and A. Gallagher, “Mono- and disilicon radicals in silane and silane-argon DC discharges,” J. Appl. Phys. 59, 3402–3411 (1986)JAPIAU000059000010003402000001.
- J. Robertson, “Growth mechanism of hydrogenated amorphous silicon,” J. Non-Cryst. Solids 266–269, 79–83 (2000). [Inspec] [ISI]
- J. T. Drotar, Y.-P. Zhao, T.-M. Lu, and G.-C. Wang, “Mechanisms for plasma and reactive ion etch-front roughening,” Phys. Rev. B 61, 3012–3021 (2000).
- J. T. Drotar, Y.-P. Zhao, T.-M. Lu, and G.-C. Wang, “Surface roughening in shadowing growth and etching in 2+1 dimensions,” Phys. Rev. B 62, 2118–2125 (2000).
- V. K. Singh, E. S. G. Shaqfeh, and J. P. McVittie, “Simulation of profile evolution in silicon reactive ion etching with re-emission and surface diffusion,” J. Vac. Sci. Technol. B 10, 1091–1104 (1992)JVTBD9000010000003001091000001.
- T. Karabacak, J. P. Singh, Y.-P. Zhao, G.-C. Wang, and T.-M. Lu, “Scaling during shadowing growth of isolated nano-columns,” Phys. Rev. B 68, 125408 (2003).
- T. Karabacak, G.-C. Wang, and T.-M. Lu, “Quasi-periodic nano-structures grown by oblique angle deposition,” J. Appl. Phys. 94, 7723–7728 (2003)JAPIAU000094000012007723000001. [ISI]
- T. Smy, D. Vick, M. J. Brett, S. K. Dew, A. T. Wu, J. C. Sit, and K. D. Harris, “Three-dimensional simulation of film microstructure produced by glancing angle deposition,” J. Vac. Sci. Technol. A 18, 2507–2512 (2005)JVTAD6000018000005002507000001. [ISI]
- J. T. Drotar, Y.-P. Zhao, T.-M. Lu, and G.-C. Wang, “Why is KPZ type surface roughening so hard to observe?,” Mat. Res. Soc. Symp. Proc. 648, P7.9.1-6 (2001).
- T. Karabacak, A. Mallikarjunan, J. P. Singh, D.-X. Ye, G.-C. Wang, and T.-M. Lu, “
-phase W nanorod formation by oblique-angle sputter deposition,” Appl. Phys. Lett. 83, 3096–3098 (2003). - P. Morrow, F. Tang, T. Karabacak, P.-I. Wang, D.-X. Ye, G.-C. Wang, and T.-M. Lu, “Texture of Ru columns grown by oblique angle sputter deposition,” J. Vac. Sci. Technol. A 24, 205–215 (2006)JVTAD6000024000002000235000001.
- D. Deniz, T. Karabacak, and J. M. E. Harper, “Competitive growth mechanisms of aluminum nitride thin-films deposited by off-normal reactive magnetron sputtering,” J. of Appl. Phys. 103, 083553 (2008)JAPIAU000103000008083553000001.
- T. Karabacak, P.-I. Wang, G.-C. Wang, and T.-M. Lu, “Growth of single crystal tungsten nanorods by oblique angle sputter deposition,” Mat. Res. Soc. Symp. Proc. 788, 75–80 (2004).
- J. M. Garcia-Ruiz, A. Lakhtakia, and R. Messier, “Does competition between growth elements eventually eliminate self-affinity?,” Speculations Sci. Technol. 15, 60–71 (1991).
- Y. Shim, M. E. Mills, V. Borovikov, and J. G. Amar, “Effects of substrate rotation in oblique-incidence metal(100) epitaxial growth,” Phys. Rev. E 79, 051604 (2009).















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