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Single photon emission and detection at the nanoscale utilizing semiconductor nanowires
J. Nanophoton. 5, 053502 (Mar 29, 2011); http://dx.doi.org/10.1117/1.3562279
We report recent progress toward on-chip single photon emission and detection in the near infrared utilizing semiconductor nanowires. Our single photon emitter is based on a single InAsP quantum dot embedded in a p-n junction defined along the growth axis of an InP nanowire. Under forward bias, light is emitted from the single quantum dot by electrical injection of electrons and holes. The optical quality of the quantum dot emission is shown to improve when surrounding the dot material by a small intrinsic section of InP. Finally, we report large multiplication factors in excess of 1000 from a single-Si-nanowire avalanche photodiode comprised of p-doped, intrinsic, and n-doped sections. The large multiplication factor obtained from a single Si nanowire opens up the possibility to detect a single photon at the nanoscale.
© 2011 Society of Photo-Optical Instrumentation Engineers (SPIE)
History
Received Sep 23, 2010
Accepted Jan 05, 2011
Revised Dec 29, 2010
Published online Mar 29, 2011
Accepted Jan 05, 2011
Revised Dec 29, 2010
Published online Mar 29, 2011
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Citation
Michael E. Reimer, Maarten P. van Kouwen, Maria Barkelid, Moïra Hocevar, Maarten H. M. van Weert, Rienk E. Algra, Erik P. A. M. Bakkers, Mikael T. Björk, Heinz Schmid, Heike Riel, Leo P. Kouwenhoven and Val Zwiller, "Single photon emission and detection at the nanoscale utilizing semiconductor nanowires",
J. Nanophoton. 5, 053502 (Mar 29, 2011); http://dx.doi.org/10.1117/1.3562279
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