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Synthesis of indium nanowires by oblique angle deposition

J. Nanophoton. 5, 053522 (Sep 09, 2011); http://dx.doi.org/10.1117/1.3630050

Aniruddha Mondal and Paul Samy Chinnamuthu

National Institute of Technology Agartala, Department of Electronics and Communication Engineering, Jirania, Tripura (West) 799055, India

Indium nanowires were synthesized by the oblique angle deposition technique, using an e-beam evaporator. The shape of the deposited nanowires changes with the vapor flux angle, and the x-ray diffraction spectrum shows scattering from tetragonal phase indium. Deposition rates ranging from 0.5 to 5 A°/s were used for 200 and 500 nm thick deposits. Nanowires formed at the highest deposition rate and were up to 4.5 μm in length. Raman scattering shows enhanced intensity and optical absorption occurs in the infrared region.

© 2011 Society of Photo-Optical Instrumentation Engineers (SPIE)

History
Received Jun 27, 2011
Accepted Aug 08, 2011
Revised Aug 03, 2011
Published online Sep 09, 2011
Citation
Aniruddha Mondal and Paul Samy Chinnamuthu, "Synthesis of indium nanowires by oblique angle deposition", J. Nanophoton. 5, 053522 (Sep 09, 2011); http://dx.doi.org/10.1117/1.3630050

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