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Journal of Nanophotonics / Volume 5 / Letters

Structural optimization of quantum wells used in a 1-μm vertical-external-cavity surface-emitting laser

J. Nanophoton. 5, 059502 (Apr 05, 2011); http://dx.doi.org/10.1117/1.3562569

Peng Zhang, Teli Dai, and Yiping Liang

Chongqing Normal University, College of Physics and Electronic Engineering, Tian Chen Road, Chongqing 400047, China

Chongqing Normal University, Chongqing Key Laboratory of Optical Engineering, Chongqing 400047, China

Yanrong Song

Beijing University of Technology, College of Applied Sciences, Beijing 100124, China

On the basis of the analysis of material gain, a comprehensive optimization of quantum wells used in a 1-μm vertical-external-cavity surface-emitting laser was carried out. For a single-well structure, the optimized width lies between 8 and 10 nm, the optimized depth is a quantum well with ∼0.1 Al composition in AlGaAs barrier, and the optimized configurations are graded-index quantum well and quantum well with AlGaAs barrier and a GaAs buffer layer. The optimal width of a double- or triple-well structure lies between 6 and 8 nm. Compared to its single- and triple-well counterparts, double-well structure provides higher gain and has more tolerance to the deviation of laser wavelength.

© 2011 Society of Photo-Optical Instrumentation Engineers (SPIE)

History
Received Nov 24, 2010
Accepted Feb 01, 2011
Revised Jan 27, 2011
Published online Apr 05, 2011
Digital Object Identifier
http://dx.doi.org/10.1117/1.3562569
Citation
Peng Zhang, Yanrong Song, Teli Dai and Yiping Liang, "Structural optimization of quantum wells used in a 1-μm vertical-external-cavity surface-emitting laser", J. Nanophoton. 5, 059502 (Apr 05, 2011); http://dx.doi.org/10.1117/1.3562569

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  1. A. C. Tropper and S. Hoogland, “Extended cavity surface-emitting semiconductor lasers” Prog. Quant. Electron. 30, 1–43 (2006). [Inspec]
  2. T. D. Raymond, W. J. Alford, M. H. Crawford, and A. A. Allerman, “Intracavity frequency doubling of a diode-pumped external cavity surface emitting semiconductor laser,” Opt. Lett. 24, 1127–1129 (1999). [ISI] [MEDLINE]
  3. A. Richter, E. Heumann, and G. Huber, “Power scaling of semiconductor laser pumped Praseodymium-laser,”Opt. Express 15, 5172–5178 (2007).
  4. A. Garnache, A. A. Kachanov, F. Stoeckel, and R. Planel, “High-sensitivity intracavity laser absorption spectroscopy with vertical-external-cavity surface-emitting semiconductor lasers,” Opt. Lett. 24, 826–828 (1999).
  5. J. V. Moloney, J. Hader, and S. W. Koch, “Quantum design of semiconductor active materials laser and amplifier applications,” Laser Photon. Rev. 1, 24–43 (2007).
  6. J. Hader, J. V. Moloney, M. Fallahi, L. Fan, and S. W. Koch, “Closed-loop design of a semiconductor laser,” Opt. Lett. 31, 3300–3302 (2006).
  7. L. Fan, J. Hader, M. Schillgalies, M. Fallahi, A. R. Zakharian, J. V. Moloney, R. Bedford, J. T. Murray, S. W. Koch, and W. Stolz, “High-power optically pumped VECSEL using a double-well resonant periodic gain structure,” IEEE Photon. Tech. Lett. 17, 1764–1766 (2005).
  8. J. Yoo, K. Kim, S. Lee, S. Lim, G. Kim, J. Kim, S. Cho, J. Lee, T. Kim, and Y. Park, “Gain structure optimization of vertical external cavity surface emitting laser at 920 nm,” Appl. Phys. Lett. 89, 131125 (2006).
  9. N. Schulz, J. M. Hopkins, M. Rattunde, D. Burns, and J. Wagner, “High-brightness long-wavelength semiconductor disk lasers,” Laser Photon. Rev. 2, 160–181 (2008).
  10. C. S. Chang and S. L. Chuang, “Modeling of strained quantum-well lasers with spin-orbit coupling,” IEEE J. Sel. Top. Quant. 1, 218–229 (1995).
  11. R. Zimmermann, Many-Particle Theory of Highly Excited Semiconductors, Teubner Verlagsgesellschaft, Leipzig (1998).
  12. J. Piprek, Semiconductor Optoelectronic Devices Introduction to Physics and Simulation, Academic Press, New York (2003).
  13. P. Zhang, Y. Song, J. Tian, X. Zhang, and Z. Zhang, “Gain characteristics of InGaAs strained quantum wells with GaAs, AlGaAs and GaAsP barriers in vertical-external-cavity surface-emitting lasers,” J. Appl. Phys. 105, 053103 (2009).
  14. E. A. Avrutin, I. E. Chebunina, I. A. Eliachevitch, S. A. Gurevich, M. E. Portnoi, and G. E. Shtengel, “TE and TM optical gains in AlGaAs/GaAs single-quantum-well lasers,” Semicond. Sci. Technol. 8, 80–87 (1993).
  15. F. Saas, V. Talalaev, U. Griebner, J. W. Tomm, M. Zorn, A. Knigge, and M. Weyers, “Optically pumped semiconductor disk laser with graded and step indices,” Appl. Phys. Lett. 89, 151120 (2006).

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