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Journal of Nanophotonics / Volume 5 / Letters

Combined atomic force microscopy-Raman mapping of electric field enhancement and surface-enhanced Raman scattering hot-spots for nanosphere lithography substrates

J. Nanophoton. 5, 059504 (Jun 01, 2011); http://dx.doi.org/10.1117/1.3595345

Claire S. Sweetenham and Ioan Notingher

University of Nottingham, Nanoscience Group, School of Physics and Astronomy, University Park, Nottingham, NG7 2RD, United Kingdom

Surface-enhanced Raman spectroscopy (SERS) substrates formed by nanosphere lithography were investigated for their spatial distribution and magnitude of electric field enhancement. An integrated atomic force microscopy and Raman micro-spectroscopy system was used to establish, with high accuracy, the correlation between the local SERS mappings and substrate topography. Using a monolayer of rhodamine 6G as a probe of the local electric field, the high resolution Raman mappings, showed that the highest electric field enhancement originates from the metallic nanostructures rather than the gaps between them. The enhancement factor of the substrates is calculated from Raman spectra of the substrates covered in a monolayer of p-aminothiophenol and spatial measurements, giving a value on the order of 105. The experimental results were confirmed by theoretical calculations using the finite element method.

© 2011 Society of Photo-Optical Instrumentation Engineers (SPIE)

History
Received Jan 21, 2011
Accepted May 09, 2011
Revised May 05, 2011
Published online Jun 01, 2011
Digital Object Identifier
http://dx.doi.org/10.1117/1.3595345
Citation
Claire S. Sweetenham and Ioan Notingher, "Combined atomic force microscopy-Raman mapping of electric field enhancement and surface-enhanced Raman scattering hot-spots for nanosphere lithography substrates", J. Nanophoton. 5, 059504 (Jun 01, 2011); http://dx.doi.org/10.1117/1.3595345

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