Silicon-on-insulator microring resonator defect-based photodetector with 3.5-GHz bandwidth

Ackert, Jason J.; Fiorentino, Marco; Logan, Dylan F.; Beausoleil, Raymond G.; Jessop, Paul E.; Knights, Andrew P.

doi:doi:10.1117/1.3666059

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Journal of Nanophotonics / Volume 5 / Letters

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Silicon-on-insulator microring resonator defect-based photodetector with 3.5-GHz bandwidth

J. Nanophoton. 5, 059507 (Dec 13, 2011); http://dx.doi.org/10.1117/1.3666059

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Jason J. Ackert, Dylan F. Logan, and Andrew P. Knights

McMaster University, Department of Engineering Physics, 1280 Main St. West, John Hodgins Engineering Building, Room A315, Hamilton, ON L8S 4L8 Canada ackertjj@mcmaster.ca

Marco Fiorentino and Raymond G. Beausoleil

Hewlett Packard Laboratories, 1501 Page Mill Road, Palo Alto, California

Paul E. Jessop

Wilfrid Laurier University, Department of Physics, 75 University Avenue West, Waterloo, Canada

We have devised and fabricated high-speed silicon-on-insulator resonant microring photodiodes. The detectors comprise a p-i-n junction across a silicon rib waveguide microring resonator. Light absorption at 1550 nm is enhanced by implanting the diode intrinsic region with boron ions at 350 keV with a dosage of 1 × 10¹³ cm⁻². We have measured 3-dB bandwidths of 2.4 and 3.5 GHz at 5 and 15 V reverse bias, respectively, and observed an open-eye diagram at 5 gigabit/s with 5 V bias.

History

Received Sep 29, 2011
Accepted Nov 16, 2011
Revised Nov 14, 2011
Published online Dec 13, 2011

Digital Object Identifier

http://dx.doi.org/10.1117/1.3666059

Citation

Jason J. Ackert, Marco Fiorentino, Dylan F. Logan, Raymond G. Beausoleil, Paul E. Jessop and Andrew P. Knights, "Silicon-on-insulator microring resonator defect-based photodetector with 3.5-GHz bandwidth", J. Nanophoton. 5, 059507 (Dec 13, 2011); http://dx.doi.org/10.1117/1.3666059

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