Molecular beam epitaxial growth of InSb p-i-n photodetectors on GaAs and Si

Michel, Erick J.; Peters, R.; Slivken, Steven; Jelen, Christopher L.; Bove, P.; Xu, Jianren; Ferguson, Ian T.; Razeghi, Manijeh

doi:doi:10.1117/12.206888

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Proceedings / Volume 2397 / Optoelectronics V

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Molecular beam epitaxial growth of InSb p-i-n photodetectors on GaAs and Si

Proc. SPIE 2397, 379 (1995); doi:10.1117/12.206888

Monday 06 February 1995

San Jose, CA, USA

Optoelectronic Integrated Circuit Materials, Physics, and Devices

Manijeh Razeghi, Yoon-Soo Park, Gerald L. Witt

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Abstract

Citing Articles (2)

Erick J. Michel, R. Peters, Steven Slivken, Christopher L. Jelen, P. Bove, Jianren Xu, Ian T. Ferguson, and Manijeh Razeghi

Northwestern Univ. (USA)

High quality InSb has been grown by Molecular Beam Epitaxy and optimized using Reflection High Energy Electron Diffraction. A 4.8 micrometers InSb layer grown on GaAs at a growth temperature of 395 degree(s)C and a III/V incorporation ratio of 1:1.2 had an X-ray rocking curve FWHM of 158 arcsec and a Hall mobility of 92300 cm²V^-1s^-1 at 77 K, the best reported to date for InSb nucleated directly onto GaAs. InSb p-i-n structures of 5.8 micrometers grown under the same conditions demonstrated a X-ray Full Width at Half Maximum of 101 arcsec and 131 arcsec for GaAs and Si substrates, respectively, and exhibited excellent uniformity of +/- 3 arcsec over a 3' substrate. Prototype InSb p-i-n detectors on Si have been fabricated and have demonstrated photovoltaic response at 6.5 micrometers up to 200 K. These p-i-n detectors have also exhibited the highest D* for a device grown onto Si.

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http://dx.doi.org/10.1117/12.206888

Citation

Erick J. Michel, R. Peters, Steven Slivken, Christopher L. Jelen, P. Bove, Jianren Xu, Ian T. Ferguson and Manijeh Razeghi, "Molecular beam epitaxial growth of InSb p-i-n photodetectors on GaAs and Si", Proc. SPIE 2397, 379 (1995); doi:10.1117/12.206888