Photo- and electro-luminescence studies of uncooled arsenic-rich In(As,Sb) strained layer superlattice light-emitting diodes for the 4-12-μm band

Tang, Patrick J.; Pullin, Mark J.; Chung, S. J.; Phillips, Christopher C.; Stradling, R. A.; Norman, A. G.; Li, Y. B.; Hart, L.

doi:doi:10.1117/12.206930

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Proceedings / Volume 2397 / Optoelectronics V

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Photo- and electro-luminescence studies of uncooled arsenic-rich In(As,Sb) strained layer superlattice light-emitting diodes for the 4-12-μm band

Proc. SPIE 2397, 389 (1995); http://dx.doi.org/10.1117/12.206930

Monday 06 February 1995

San Jose, CA, USA

Optoelectronic Integrated Circuit Materials, Physics, and Devices

Manijeh Razeghi, Yoon-Soo Park, Gerald L. Witt

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Abstract

Citing Articles (1)

Patrick J. Tang, Mark J. Pullin, S. J. Chung, Christopher C. Phillips, R. A. Stradling, A. G. Norman, Y. B. Li, and L. Hart

Imperial College of Science, Technology and Medicine (United Kingdom)

4-12 micrometers Photoluminescence (PL) and electroluminescence (EL) at room temperature are observed from In(As,Sb) undoped strained layer superlattices (SLS's) and SLS diodes. The SLS's are grown by molecular beam epitaxy on GaAs substrates and are composed of arsenic rich alloys clad between InAs layers. The long wavelength emission is accounted for by an extreme type II valence band offset equals 830x meV (where x in the Sb composition). Internal PL efficiencies greater than 10% for light emission up to 9 micrometers are observed at 12 K in spite of presumed large dislocation densities due to the epilayer/substrate mismatch (approximately 7%). This is consistent with the thesis that defects in As rich alloys are, as in InAs, resonant with the conduction band instead of forming non-radiative recombination centers in the band gap. The high radiative efficiencies even at room temperature are attributed to the suppression of Auger recombination in the type II superlattice. We report the first Electroluminescence spectra covering the 4 - 12 micrometers wavelength range from a series of uncooled SLS LED's. Clear atmospheric absorption features in the EL spectra demonstrate their usefulness for gas sensing applications. The growth of these devices on GaAs substrates offers the possibility of easy integration with existing III-V fabrication technologies.

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http://dx.doi.org/10.1117/12.206930

Citation

Patrick J. Tang, Mark J. Pullin, S. J. Chung, Christopher C. Phillips, R. A. Stradling, A. G. Norman, Y. B. Li and L. Hart, "Photo- and electro-luminescence studies of uncooled arsenic-rich In(As,Sb) strained layer superlattice light-emitting diodes for the 4-12-μm band", Proc. SPIE 2397, 389 (1995); http://dx.doi.org/10.1117/12.206930