Sb-based infrared materials and photodetectors for the 3-5 and 8-12 μm range

Michel, Erick J.; Kim, Jedon D.; Park, Seoijin; Xu, Jianren; Ferguson, Ian T.; Razeghi, Manijeh

doi:doi:10.1117/12.237694

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Proceedings / Volume 2685 / Uncooled Detectors

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Sb-based infrared materials and photodetectors for the 3-5 and 8-12 μm range

Proc. SPIE 2685, 101 (1996); http://dx.doi.org/10.1117/12.237694

Thursday 01 February 1996

San Jose, CA, USA

Photodetectors: Materials and Devices

Gail J. Brown, Manijeh Razeghi

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Abstract

Erick J. Michel, Jedon D. Kim, Seoijin Park, Jianren Xu, Ian T. Ferguson, and Manijeh Razeghi

Northwestern Univ. (USA)

In this paper, we report on the growth of InSb on (100) Si and (111)B GaAs substrates and the growth of InAsSb alloys for longer wavelength applications. The fabrication and characterization of photodetectors based on these materials are also reported. Both photoconductive and photovoltaic devices are investigated. The photodiodes are InSb p-i-n structures and InSb/InAs_1-xSb_x/InSb double heterostructures grown on (100) and (111)B semi-insulating GaAs and Si substrates by low pressure metalorganic chemical vapor deposition and solid source molecular beam epitaxy. The material parameters for device structures have been optimized through theoretical calculations based on fundamental mechanisms. InSb p-i-n photodiodes with peak responsivities approximately 10³ V/W were grown on Si and (111) GaAs substrates. An InAsSb photovoltaic detector with a composition of x equals 0.85 showed photoresponse up to 13 micrometers at 300 K with a peak responsivity of 9.13 X 10^-2 V/W at 8 micrometers . The R_oA product of InAsSb detectors has been theoretically and experimentally analyzed.

History

Online Dec 28, 2004

Digital Object Identifier

http://dx.doi.org/10.1117/12.237694

Citation

Erick J. Michel, Jedon D. Kim, Seoijin Park, Jianren Xu, Ian T. Ferguson and Manijeh Razeghi, "Sb-based infrared materials and photodetectors for the 3-5 and 8-12 μm range", Proc. SPIE 2685, 101 (1996); http://dx.doi.org/10.1117/12.237694