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Sb-based infrared materials and photodetectors for the near-room-temperature applications
Proc. SPIE 2999, 55 (1997); doi:10.1117/12.271212
Wednesday 12 February 1997
San Jose, CA, USA
Photodetectors: Materials and Devices II
Gail J. Brown, Manijeh Razeghi
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Add to FacebookWe report on the growth of InSb, InAsSb, and InTlSb alloys for infrared photodetector applications. The fabrication and characterization of photodetectors based on these materials are also reported. Both photoconductive and photovoltaic devices are investigated. The materials and detector structures were grown on (100) and (111)B semi-insulating GaAs and GaAs coated Si substrates by low pressure metalorganic chemical vapor deposition and solid source molecular beam epitaxy. Photoconductive detectors fabricated from InAsSb and InTlSb have been operated in the temperature range from 77 K to 300 K. The material parameters for photovoltaic device structures have been optimized through theoretical calculations based on fundamental mechanisms. InSb p-i-n photodiodes with 77 K peak responsivities approximately 103 V/W were grown on Si and (111) GaAs substrates. An InAsSb photovoltaic detector with a composition of x equals 0.85 showed photoresponse up to 13 micrometers at 300 K with a peak responsivity of 9.13 X 10-2 V/W at 8 micrometers . The RoA product of InAsSb detectors has been theoretically and experimentally analyzed.
© 2004 COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
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Online Aug 30, 2004
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Jedon D. Kim, Erick J. Michel, H. Mohseini, Joseph S. Wojkowski, J. J. Lee and Manijeh Razeghi, "Sb-based infrared materials and photodetectors for the near-room-temperature applications",
Proc. SPIE 2999, 55 (1997); doi:10.1117/12.271212
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