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Improvement of avalanche photodetectors through integration of InGaAs and Si
Proc. SPIE 2999, 68 (1997); http://dx.doi.org/10.1117/12.271213
Wednesday 12 February 1997
San Jose, CA, USA
Photodetectors: Materials and Devices II
Gail J. Brown, Manijeh Razeghi
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Add to FacebookNear infrared avalanche photodetectors have been constructed by wafer fusing epitaxial layers of InGaAs to Si. This integration combines the light absorption properties of InGaAs with the avalanche multiplication properties of Si. We concentrate here on two of the advantages these detectors have: desirable gain sensitivity properties, and high gain- bandwidth-products which would make them ideal for optical communication applications. Measurements are shown that illustrate very gradual gain increases with increasing device voltages as well as gain-bandwidth-products of over 300 GHz.
© 2004 COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
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Online Aug 30, 2004
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Aaron R. Hawkins, Weishu Wu and John E. Bowers, "Improvement of avalanche photodetectors through integration of InGaAs and Si",
Proc. SPIE 2999, 68 (1997); http://dx.doi.org/10.1117/12.271213
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