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Continuous-wave room-temperature operation of InGaN/GaN multiquantum well lasers grown by low-pressure metalorganic chemical vapor deposition
Proc. SPIE 3284, 113 (1998); http://dx.doi.org/10.1117/12.304463
Monday 26 January 1998
San Jose, CA, USA
In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II
Hong K. Choi, Peter S. Zory
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Add to FacebookContinuous-wave (CW) room temperature operation of InGaN/GaN multi-quantum well (MQW) lasers is reported. Far-field beam divergence as narrow as 13 degrees and 20 degrees for parallel and perpendicular directions to epilayer planes were measured, respectively. The MQW lasers showed strong beam polarization anisotropy as consistent with QW laser gain theory. Dependencies of threshold current on cavity-length and temperature are also consistent with conventional laser theory. No significant degradation in laser characteristics was observed during lifetime testing for over 140 hours of CW room temperature operation.
© 2003 COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
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Online May 08, 2003
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Manijeh Razeghi, Adam W. Saxler, Patrick Kung, Danielle Walker, Xiaolong Zhang, Adam Rybaltowski, Y. Xiao, Hyuk J. Yi and Jacqueline E. Diaz, "Continuous-wave room-temperature operation of InGaN/GaN multiquantum well lasers grown by low-pressure metalorganic chemical vapor deposition",
Proc. SPIE 3284, 113 (1998); http://dx.doi.org/10.1117/12.304463
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