Jump to Content
Your Recent History
View Cart
SUBSCRIPTIONS & PRICING
GENERAL INFORMATION
Logged Out Log In
InGaN/GaN double heterostructure laser with cleaved facets
Proc. SPIE 3284, 122 (1998); http://dx.doi.org/10.1117/12.304461
Monday 26 January 1998
San Jose, CA, USA
In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II
Hong K. Choi, Peter S. Zory
Alerts
Alert Me When Cited
Alert Me When Corrected
Tools
Download Citation
Add to MyScitation
Blog This Article
Print-Friendly
Research Toolkit
Share
Email Abstract
Connotea
CiteULike
del.icio.us
BibSonomy
Tweet this Article
Add to FacebookLaser action is demonstrated in InGaN/GaN double heterostructures with cleaved facets. Hydride vapor phase epitaxy is used to grow a 10-micrometer-thick buffer layer of GaN on (0001) sapphire, and metal-organic vapor phase epitaxy is used to subsequently grow a GaN/In0.09Ga0.91N/GaN double heterostructure. One-mm-long cavities are produced by cleaving the structure along the (1010) plane of the sapphire substrate. A pulsed Nitrogen laser is used for optical excitation. At room temperature, the laser threshold occurs at an incident power density of 1.3 MW/cm2. Above threshold, the differential quantum efficiency increases by a factor of 34, the emission linewidth decreases to 13.5 meV, and the output becomes highly TE polarized.
© 2003 COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
History
Online May 08, 2003
Digital Object Identifier
Citation
Dean A. Stocker, E. F. Schubert, W. Grieshaber, Karim S. Boutros, J. S. Flynn, Robert P. Vaudo, V. M. Phanse and Joan M. Redwing, "InGaN/GaN double heterostructure laser with cleaved facets",
Proc. SPIE 3284, 122 (1998); http://dx.doi.org/10.1117/12.304461
DOWNLOAD ARTICLE
RELATED CONTENT
More Like This Article
SPIE Digital Library
This Publication
Google Scholar
PubMed