Solar-blind AlxGa1-xN p-i-n photodetectors grown on LEO and non-LEO GaN

Sandvik, Peter M.; Walker, Danielle; Kung, Patrick; Mi, Kan; Shahedipour, Fatemeh; Kumar, Vipan; Zhang, Xinghong; Diaz, Jacqueline E.; Jelen, Christopher L.; Razeghi, Manijeh

doi:doi:10.1117/12.382126

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Proceedings / Volume 3948 / Photodiodes for Ultraviolet Detection I

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Solar-blind Al_xGa_1-xN p-i-n photodetectors grown on LEO and non-LEO GaN

Proc. SPIE 3948, 265 (2000); doi:10.1117/12.382126

Wednesday 26 January 2000

San Jose, CA, USA

Photodetectors: Materials and Devices V

Gail J. Brown, Manijeh Razeghi

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Abstract

Citing Articles (5)

Peter M. Sandvik, Danielle Walker, Patrick Kung, Kan Mi, Fatemeh Shahedipour, Vipan Kumar, Xinghong Zhang, Jacqueline E. Diaz, Christopher L. Jelen, and Manijeh Razeghi

Northwestern Univ. (USA)

There is currently a strong interest in developing solid- state, UV photodetectors for a variety of applications. Some of these are early missile threat warning, covet space to space communications, flame monitoring, UV radiation monitoring and chemical/biological reagent detection. The III-Nitride material system is an excellent candidate for such applications due to its wide, reagent detection. The III-Nitride material system is an excellent candidate for such applications due to its wide, direct bandgaps and robust material nature. However, despite many inherent material advantages, the III-Nitride material system typically suffers from a large number of extended defects which degrade material quality and device performance. One technique aimed at reducing defect densities in these materials is lateral epitaxial overgrowth (LEO). In this work, we present a preliminary comparison between AlGaN UV, solar-blind p-i-n photodiodes fabricated form LEO GaN and non-LEO GaN. Improvements in both responsivity and rejection ratio are observed, however, further device improvements are necessary. For these, we focus on the optimization of the p- i-n structure and a reduction in contact resistivity to p- GaN and p-AlGaN layers. By improving the structure of the device, GaN p-i-n photodiodes were fabricated and demonstrate 86 percent internal quantum efficiency at 362 nm and a peak to visible rejection ratio of 10⁵. Contact treatments have reduced the contact resistivity to p-GaN and p-AlGaN by over one order of magnitude form our previous results.

History

Online Jul 03, 2003

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http://dx.doi.org/10.1117/12.382126

Citation

Peter M. Sandvik, Danielle Walker, Patrick Kung, Kan Mi, Fatemeh Shahedipour, Vipan Kumar, Xinghong Zhang, Jacqueline E. Diaz, Christopher L. Jelen and Manijeh Razeghi, "Solar-blind Al_xGa_1-xN p-i-n photodetectors grown on LEO and non-LEO GaN", Proc. SPIE 3948, 265 (2000); doi:10.1117/12.382126