GaN homojunction and AlGaN/GaN heterojunction visible-blind photodiodes grown on SiC

Bulman, Gary E.; Kong, Hua-Shuang; Leonard, Michelle T.

doi:doi:10.1117/12.382127

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Proceedings / Volume 3948 / Photodiodes for Ultraviolet Detection I

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GaN homojunction and AlGaN/GaN heterojunction visible-blind photodiodes grown on SiC

Proc. SPIE 3948, 273 (2000); http://dx.doi.org/10.1117/12.382127

Wednesday 26 January 2000

San Jose, CA, USA

Photodetectors: Materials and Devices V

Gail J. Brown, Manijeh Razeghi

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Abstract

Gary E. Bulman, Hua-Shuang Kong, and Michelle T. Leonard

Cree Research, Inc. (USA)

GaN homojunction and AlGaN/GaN heterojunction UV photodiodes were successfully fabricated and tested. The p⁺/n mesa devices were grown on a n-type 6H-SiC substrate. Photoresponse was observed in these deices from 206 nm to the cutoff wavelength of GaN. Peak responsivity values of 111 mA/W and 123 mA/W were observed at 360 nm for unpackaged homojunction and heterojunction devices, respectively. In packaged device, the peak responsivity increased to 124 and 147 mA/W for the homojunction and heterojunction devices, respectively. High breakdown voltages in excess of 100 V for the homojunction and 70 V for the heterojunction devices were obtained with dark current densities of 3 by 10^-11 A/cm² and 1 by 10^-10 A/cm² A/cm² at -1V bias at room temperature, respectively. These result show that homojunction and heterojunction visible-blind detectors can be fabricated in the AlGaN/GaN material system on SiC substrates.

History

Online Jul 03, 2003

Digital Object Identifier

http://dx.doi.org/10.1117/12.382127

Citation

Gary E. Bulman, Hua-Shuang Kong and Michelle T. Leonard, "GaN homojunction and AlGaN/GaN heterojunction visible-blind photodiodes grown on SiC", Proc. SPIE 3948, 273 (2000); http://dx.doi.org/10.1117/12.382127