AlxGa1-xN materials and device technology for solar blind ultraviolet photodetector applications

McClintock, Ryan; Sandvik, Peter M.; Mi, Kan; Shahedipour, Fatemeh; Yasan, Alireza; Jelen, Christopher L.; Kung, Patrick; Razeghi, Manijeh

doi:doi:10.1117/12.429409

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Proceedings / Volume 4288 / Photodiodes for Ultraviolet Detection

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Al_xGa_1-xN materials and device technology for solar blind ultraviolet photodetector applications

Proc. SPIE 4288, 219 (2001); http://dx.doi.org/10.1117/12.429409

Monday 22 January 2001

San Jose, CA, USA

Photodetectors: Materials and Devices VI

Gail J. Brown, Manijeh Razeghi

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Abstract

Citing Articles (2)

Ryan McClintock, Peter M. Sandvik, Kan Mi, Fatemeh Shahedipour, Alireza Yasan, Christopher L. Jelen, Patrick Kung, and Manijeh Razeghi

Northwestern Univ. (USA)

There has been a growing interest for the development of solar blind ultraviolet (UV) photodetectors for use in a variety of applications, including early missile threat warning, flame monitoring, UV radiation monitoring and chemical/biological reagent detection. The Al_xGa_1-xN material system has emerged as the most promising approach for such devices. However, the control of the material quality and the device technology are still rather immature. We report here the metalorganic chemical vapor deposition, the n-type and the p-type doping of high quality Al_xGa^1-xN thin films on sapphire substrates over a wide range of Al concentration. The quality of this Al_xGa_1-xN material was verified through the demonstration of high performance visible and solar blind ultraviolet p-i-n photodiodes with a cut-off wavelength continuously tunable from 227 to 365 nm, internal quantum efficiencies up to 86% when operated in photovoltaic mode, and a ultraviolet-to-visible rejection ratio as high as six orders of magnitude. Both front and back side illuminated p-i-n photodiodes were realized. Photodetector devices were also demonstrated on GaN material obtained using lateral epitaxial overgrowth. The technology for such Al_xGa_1-xN based devices was improved in an effort to enhance their performance, including the development of ohmic metal contacts to both n-type and p-type Al_xGa_1-xN films with an Al concentration up to 40%.

History

Online Apr 30, 2004

Digital Object Identifier

http://dx.doi.org/10.1117/12.429409

Citation

Ryan McClintock, Peter M. Sandvik, Kan Mi, Fatemeh Shahedipour, Alireza Yasan, Christopher L. Jelen, Patrick Kung and Manijeh Razeghi, "Al_xGa_1-xN materials and device technology for solar blind ultraviolet photodetector applications", Proc. SPIE 4288, 219 (2001); http://dx.doi.org/10.1117/12.429409