Temperature dependence homogeneous broadening and gain recovery dynamics in InGaAs quantum dots

Borri, P.; Langbein, Wolfgang W.; Schneider, S.; Woggon, Ulrike; Sellin, Roman; Ouyang, Donald N.; Bimberg, Dieter

doi:doi:10.1117/12.514297

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Proceedings / Volume 5023 / Lasers and Optoelectronic Devices

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Temperature dependence homogeneous broadening and gain recovery dynamics in InGaAs quantum dots

Proc. SPIE 5023, 334 (2002); http://dx.doi.org/10.1117/12.514297

10th International Symposium on Nanostructures: Physics and Technology

Zhores I. Alferov, Leo Esaki

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Abstract

P. Borri, Wolfgang W. Langbein, S. Schneider, and Ulrike Woggon

Univ. Dortmund (Germany)

Roman Sellin, Donald N. Ouyang, and Dieter Bimberg

Technische Univ. Berlin (Germany)

We present temperature-dependent measurements of the dephasing time in the ground-state transition of strongly-confined InGaAs quantum dots, using a highly sensitive four-wave mixing technique. At low temperature we measure a dephasing time of several hundred picoseconds. Between 7 and 100 K the polarization decay has two distinct components resulting in a non-Lorentzian lineshape with a sharp zero-phonon line and a broad band from elastic exciton-acoustic phonon interactions. We also explore the dephasing time beyond the one exciton occupation, by electrically injecting carriers. Electrical injection into the barrier region results in a dominantly pure dephasing of the excitonic ground-state transition. Once the injected carriers have filled the electronic ground state, additional filling of the excited states creates multiexcitons that show a fast dephasing due to population relaxation.

History

Online Oct 09, 2003

Digital Object Identifier

http://dx.doi.org/10.1117/12.514297

Citation

P. Borri, Wolfgang W. Langbein, S. Schneider, Ulrike Woggon, Roman Sellin, Donald N. Ouyang and Dieter Bimberg, "Temperature dependence homogeneous broadening and gain recovery dynamics in InGaAs quantum dots", Proc. SPIE 5023, 334 (2002); http://dx.doi.org/10.1117/12.514297