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Fast and accurate hybrid subgrid and subcell finite-difference time-domain methods for the simulation of mask electromagnetic effects in sub-45nm lithography
Proc. SPIE 7122, 71221T (2008); http://dx.doi.org/10.1117/12.801351
Tuesday 7 October 2008
Monterey, CA, USA
Photomask Technology 2008
Hiroichi Kawahira, Larry S. Zurbrick
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Add to FacebookSubgrid and subcell FDTD (S-FDTD) methods are described. They can be used for the fast and accurate simulation of mask electromagnetic effects in sub-45nm lithography. The accuracies of the S-FDTD methods are verified by comparison with FDTD and with a very accurate pseudospectral reference solution. The S-FDTD methods are an order of magnitude or more faster than FDTD. Furthermore, the S-FDTD methods require much less memory than FDTD for time marching. Hence, much larger mask areas can be simulated with S-FDTD than with FDTD.
© 2008 COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
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Online Oct 17, 2008
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Michael S. Yeung, "Fast and accurate hybrid subgrid and subcell finite-difference time-domain methods for the simulation of mask electromagnetic effects in sub-45nm lithography",
Proc. SPIE 7122, 71221T (2008); http://dx.doi.org/10.1117/12.801351
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