Quantum dot (QD) lasers are playing an important role in high-speed optical communications and high-temperature sensing applications due to stable operation at high temperature. We propose here performance analysis of QD laser fabricated using standard photolithography and wet etch process. An InAs-GaAs quantum dot laser is fabricated and characterized for 0.948 V operating potential developed across the device and light-current characteristics exhibiting threshold current density (Jth) of 56A/cm2 per QD layer in both pulse and CW mode of operation. The slope efficiency of – 0.182 mW/A is measured in pulse mode. The optical power ranges up to 63 mW in pulse mode and 45 mW in CW operation at 800 mA. An analysis has been carried to estimate the threshold at different temperature exploiting quasiFermi levels and distribution of current density over the QD layers and confinement layers.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.