5G networks are currently being deployed around the world, introducing a new era in machine-to-machine communications and reinforcing the Internet of Things. The 5G radiofrequency bands range from sub-1 GHz to 70 GHz, while the 6th generation (6G) is expected to cover bands at hundreds of GHz. There is a need for devices with high frequency performance and scalable manufacturing using inexpensive techniques and materials. Herein we present ZnO-based Schottky diodes, processed from solution on wafer scale with high yield. Coplanar nanogap electrodes are fabricated using a high-throughput low-cost technique, named adhesion lithography. The diodes’ cutoff frequency exceeds 100 GHz.
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