Prof. Chunling Li Profile

Prof. Chunling Li

at North China Research Institute of Electro-Optics

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Proceedings Article | 5 November 2020 Paper

Study on the surface treatment process of Hg1-xCdxTe detector

Jiaojiao Qi, Ti Ning, Chunling Li

Proceedings Volume 11563, 115630C (2020) https://doi.org/10.1117/12.2579705

KEYWORDS: Mercury cadmium telluride, Infrared detectors, Etching, Oxides, Infrared sensors, Dry etching

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HgCdTe is significant material prepared infrared detector. Higher performance infrared detector and longer wavelength are vital requirements of the third infrared detector. Device performances of HgCdTe infrared detector and material interface state are inseparable. On the one hand, the HgCdTe lattice is zinc-blende cubic structure, when it is exposed to atmosphere, self-generating oxide layer can be forming on material interface, a good deal of fixed charges are existing in the oxide layer, that can make the device properties degradation seriously. On the other, in the traditional preparation process, epitaxial HgCdTe layer is corroded before surface passivation, material surface could form residual rich tellurium layer. It can also make the device properties degradation on account of recombination centers, increase surface leakage of the device. Based on the above, study on the surface treatment process of HgCdTe detector is very necessary, this paper researched a new method wiping out the self-generating oxide layer and residual rich tellurium layer to obtain a good in function HgCdTe infrared detector. In this way, prepared HgCdTe infrared detector containing cutoff wavelength of 5 μm, 9μm and 12.5 μm, compared HgCdTe infrared detector employing this new method and unused this new method. The former possessed lower dark current, lower noise equivalent temperature difference (NETD) and higher yield. This new method applying to process of HgCdTe infrared detector enhanced the detector properties, lay the foundation of longer wavelength HgCdTe infrared detector.

Proceedings Article | 5 November 2020 Paper

Reutilization of CdZnTe substrate technology for HgCdTe IRFPA detector

Chunling Li, Qian Li

Proceedings Volume 11563, 115630B (2020) https://doi.org/10.1117/12.2579658

KEYWORDS: Mercury cadmium telluride, Polishing, Infrared radiation, Liquid phase epitaxy, Surface finishing, Staring arrays, Chemical mechanical planarization

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Mercury cadmium telluride (HgCdTe) grown by liquid phase epitaxy (LPE) demonstrates superior performance in the infrared imaging applications. The HgCdTe devices are fabricated by depositing an epitaxial layer of HgCdTe on cadmium zinc telluride (CdZnTe or CZT) substrates via LPE. This LPE growth requires high-quality substrates. However, it is difficult to manufacture and polish epi-ready substrates for the LPE growth of II-VI semiconductors, especially for HgCdTe. This leads to very high cost and limits development of systems based on LPE-grown HgCdTe films. For very large two-dimensional components, thermal expansion between HgCdTe and the silicon should be considered. For these components, the CdZnTe substrates of the detector chips are thinned by polishing and chemical etch technology, and removed totally to spread the stress between the HgCdTe layers and the Indium bumps. Therefore, the high-cost CdZnTe substrates could only be used once using the traditional fabrication process. In this paper, we present a reutilization process for CdZnTe substrate. Our results demonstrate the device prepared by HgCdTe film using repolished CdZnTe substrates has good property. We could produce more chips from one CdZnTe substrate with enough thickness. This method enable the reuse of the CdZnTe substrates and significantly decreases the cost of the device.

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