Prof. Daisuke Ueda Profile

Prof. Daisuke Ueda

at Kyoto Institute of Technology

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Proceedings Article | 13 March 2015 Paper

Present and future of GaN power devices and their applications

Daisuke Ueda

Proceedings Volume 9363, 936310 (2015) https://doi.org/10.1117/12.2076351

KEYWORDS: Gallium nitride, Microwave radiation, Diodes, Switches, Silicon, Transistors, Switching, Field effect transistors, Modulation, Electronics

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This paper reviews the status quo of several GaN-based power devices. By using unique polarized heterostructure of GaN/AlGaN materials, NSJ (Natural Super Junction) diode was proposed to break through the trade-off between the blocking voltage and the on-resistance. Normally-off GaN-based device was realized by GIT (Gate Injection Transistor) structure, where p-type AlGaN hole-injector are provided as a gate reducing the on-resistance by conductivity modulation. Experimentally fabricated inverter system using GaN GIT achieved the world-highest conversion efficiency over 99.3%. Further, by combining the microwave performance and power handling capability of of GaN-based devices, we developed Drive-by-Microwave (DbM) technology as a DC-isolated gate driver for GaN power switch. This is a fusion of microwave and power devices for the first time using GaN-based materials

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