We present our approach to measure the profile of nonuniformly bent GaN epi-wafers grown on sapphire substrates. By
using a laser displacement sensor, the position of the epi-wafer is accurately measured and mapped. From the measured
profile data, analysis of stress distributions over the nonuniformly bent wafer is performed by using a theoretical model.
We show the result of theoretical analysis of how the stress tensors distribute over a wafer. The estimated stress tensors
are related with optical properties such as photoluminescence of the wafer.
A strain analysis model in the pseudomorphically grown epitaxial multilayer system is investigated. Analytical formulas
of strain parameters in each epitaxial layer are derived as the following assumptions: (1) the substrate thickness is finite,
(2) the in-plane lattice constant is the same for all epitaxial layers for dislocation free growth, (3) the stress along the
crystal growth direction is constant, but not necessary zero, (4) the in-plane lattice constant is determined such that the
total strain energy. We find the residual stress affect the electronic properties of epitaxially grown multilayer system even
though in-plane lattice constant is unchangeable compare with no stress along the crystal growth direction.
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