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Dr. Eunhwa Lee
at SAMSUNG Electronics Co Ltd
SPIE Involvement:
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Publications (1)
Proceedings Article | 5 October 2006 Paper
High-power wide temperature range (-40°C ~100°C) operation of 1300-nm InGaAsP DFB lasers with asymmetric MQWs
Eun-Hwa Lee, Young-Hyun Kim, Yu-Dong Bae, Jae-Myung Baek, Joon-Whan Park, In Kim, Yun-Kyung Oh, Dong-Hoon Jang
Proceedings Volume 6352, 63520M (2006) https://doi.org/10.1117/12.688467
KEYWORDS: Quantum wells, Temperature metrology, Semiconductor lasers, High power lasers, Laser damage threshold, Telecommunications, Electronics, Fiber to the x, Laser development, Lasers
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