In the research of the InAs/GaSb type II superlattice, MW/SW、MW/LW、MW/MW two color superlattice infrared focal detector has been developed abroad [1]. In this paper, we study the uniformity, compactness and etching resisrance of the mask prepared by PECVD. It has been proved that dry etching can satisfied the superlattice material etching depth by experiment [2]. When the experimental condition is that the CH4:H2:Cl2:Ar flow ratio is 8:15:6:15, ICP power is 400 W, and the reaction pressure is 1.0 Pa,it can be etched to the requirements of two-color superlattice depth with clear、flat mesa and no residual generation [3]. The experiment optimizes the etching technology of two-color superlattice material, and the etching result meets the requirements of the etching depth and quality of the two-color superlattice chip.
Infrared(IR)photo detectors based on InAs/GaSb type II superlattice have developed quickly in recent years. Many groups show great interest in InAs/GaSb superlattice detector for its superiors as high quantum efficient, high working temperature, high uniformity and low dark current densities. Inductively coupled plasma(ICP) etching of GaSb and InAs/ GaSb superlattices were performed using Cl2/Ar/CH4/H2. This paper introduceste inductively coupled plasma( ICP) etching of Inas/GaSb with SiO2 mask by the Cl2/Ar/CH4/H2 mixed-gas process. The effects of process parameters such as gas combination, ICP and RF power on the etch rate and quality of InAs/GaSb It is found that the ratio of Cl2 flow rate significantly affects the etch rate, due to the trade-off between physical and chemical component of etching. The etch rate of InAs/GaSb increases with the increase of percent of Cl2, there will InClx remains in the etching channel when the etching depth exceeded 2μm, which can stop the etching going on. This phenomenon can be eliminated by decrease the Cl2 ratio,to make sure the etching depth reach 6μm under a certain low etching rate. The surface morphology and SEM of the superlattice material after etching shows that dry etching morphology is better than wet etching.After the electrode is grown, the superlattice chip have a good diode characteristic curve.
This paper presents results for films of CuAlxOy were deposited on the sapphire by reactive magnetron co-sputtering using DC applied to the high-purity Cu target,RF applied to the high-purity Al target.Copper aluminum oxide film (CuAlxOy) is transparent for infrared and conductive. The properties of the films are influenced by the power of sputtering,the thickness of films etc. deposition parameters. It has been found that, by fine-tuning the sputtering parameters, the films with both reasonably low resistance and high transmission can be obtained simultaneously.The relationship between the process parameters and the properties of the films were established, the process parameters is very important for preparation of the films later.The relationship between the average transmittance, electrical conductivity and thickness of the films etc. parameters were set up.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.