Memory effects are commonly seen in organic thin-film transistor (OTFT) characteristics. In the absence of memory
effects associated with the gate dielectric, the hysteresis in p-channel pentacene-based OTFTs, as measured in air and
under illumination, was found to be dominated by trapped electrons, rather than trapped holes, in the semiconductor.
The responsible acceptor type traps have very long lifetime. The immobile, previously stored negative charge requires
extra holes to balance it, resulting in early establishment of the channel and extra drain current. This model is unique in
that it discusses the majority carrier population influenced by trapped charge opposite in sign to the majority carriers in
a simple electrostatic manner, to explain history dependence. The model was supported by drain current transient decay
data. This memory effect is ambient and illumination sensitive. We studied the presence or absence of this effect under
various ambient and illumination conditions, and found the responsible acceptor type traps mostly extrinsic and their
formation reversible. Efforts were taken in the quantitative analysis to exclude the bias stress effect from the memory
effect due to the charged acceptors.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.