Mr. Hao-Yu Chang Profile

Hao-Yu Chang

at NCKU

SPIE Involvement:

Author

Publications (1)

This will count as one of your downloads.

You will have access to both the presentation and article (if available).

DOWNLOAD NOW

This content is available for download via your institution's subscription. To access this item, please sign in to your personal account.

Email or Username Forgot your username?

Password Forgot your password?

Show

Keep me signed in

No SPIE account? Create an account

Proceedings Article | 8 March 2014 Paper

Investigation of ZnO-based ultraviolet light-emitting diodes

Ching-Ting Lee, Hao-Yu Chang

Proceedings Volume 8987, 89871W (2014) https://doi.org/10.1117/12.2044343

KEYWORDS: Internal quantum efficiency, Ultraviolet light emitting diodes, Cooling systems, Chemical species, Electroluminescence, Doping, Beryllium, Zinc oxide, Light sources and illumination, Magnesium

Read Abstract +

Recently, ZnO-based semiconductors have been deposited on various substrates using various methods. Furthermore, they were used in ultraviolet light-emitting diodes (UVLEDs) due to inherent properties including wide direct bandgap and high binding energy. In this work, two different deposition systems were utilized to deposit the ZnO-based films. The resulted films were applied to fabricate the ZnO-based UVLEDs. Firstly, the high quality i-ZnO films were deposited as the active layer by using the vapor cooling condensation system to enhance the internal quantum efficiency. Secondly, the double-heterostructured MgZnO/ZnO/MgZnO layers were deposited as the active layer at low temperature using the vapor cooling condensation system to enhance light intensity. Furthermore, various component ratios of i- MgZnO and i-MgBeZnO films were deposited using a radio frequency (RF) magnetron co-sputter system. Consequently, the deposited films with various energy bandgaps were stacked alternately to form the active layer of multiple-quantum well (MQW) UVLEDs. The light emitting intensity of MQW UVLEDs was better than that of the traditional p-i-n UVLEDs. This phenomenon was attributed to the carrier confinement in well layers and improvement probability of radiative recombination.

My Library

You currently do not have any folders to save your paper to! Create a new folder below.

Folder Name

Folder Description

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks. You are receiving this notice because your organization may not have SPIE eBooks access.*

*Shibboleth/Open Athens users─please sign in to access your institution's subscriptions.

To obtain this item, you may purchase the complete book in print or electronic format on SPIE.org.

ORGANIZATIONAL
Sign in with credentials provided by your organization.

Organizational Username

Organizational Password

Show/Hide Password

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members:

Non-members: ADD TO CART

Keywords/Phrases

Search In:

Publication Years