Mr. Hasan Sarwar Profile

Hasan Sarwar

at Univ of Dhaka

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Proceedings Article | 6 October 2006 Paper

Study of scattering in 1D nanostructured semiconductor devices using Monte Carlo simulation

Hasan Sarwar, Shahida Rafique

Proceedings Volume 6352, 63522A (2006) https://doi.org/10.1117/12.691802

KEYWORDS: Scattering, Aluminum, Indium gallium arsenide, Gallium, Monte Carlo methods, Semiconductors, Absorption, Phonons, Gallium arsenide, Nanostructuring

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Semiconductor modeling and characterization of ternary materials have been performed using simulation. Ternary semiconductors such as Al_xGa_1-xAs, Ga_xIn_1-xAs and Al_xIn_1-xAs have been studied using Monte Carlo Simulation. Standard parameters like device dimension, donor concentration, temperature, electric field, etc have been considered. Drift velocity with respect to applied electric field in the range of 10kv/cm - 60kv/cm has been observed for three ternary semiconductors. It has been found that up to 30kv/cm, velocities for different compositions show major variations. But after 30kv/cm, they show less variation from each other. It is observed that, with an increase in applied field, the G valley electron population decreases while L and X valley population increases. The scattering methods that have been considered during the study of transport properties are Polar Optical Phonon Scattering (absorption and emission), Intervalley scattering, Ionized Impurity Scattering.

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