To meet the requirements of 45nm node ultraviolet lithography exposure optical system with 193nm wavelength and 1.35 NA for high resolution in extremely large scale integrated circuit. A depolarizer is designed to implement high quality polarization mode lighting on mask surface. In this paper, the depolarizer in the polarization transformation module is designed and the AR film in the depolarizer is developed, combination of two wedge shaped quartz crystals with a diameter of 50±0.2mm is used to realize beam depolarization, with optical axes of two crystals are at an angle of 45 degrees in space. The front one achieves depolarization and the back one compensates optical path. The reflectivity of the prepared AR film is less than 99.5% at 193nm, this depolarizer solved a series of problems caused by the sharp reduction of focal depth due to the increase of NA and the shortening of exposure wavelength, therefore, the development of this depolarizer has certain application value.
In this paper, we have calculated the entanglement degrees of a two-level atom in the one-dimensional photonic crystals heat reservoir, researched the effect of parameter q on the quantum entanglement degrees, and given the quantum entanglement degrees curves with time evolution. We have taken the parameter q=1, 2, 3.5 and 8.5. Our results show when the parameter q=2, keep the time of entanglement degrees near E=1 longest, it is helpful to quantum communication. Furthermore, we have designed the one-dimensional photonic crystals heat reservoir, which meet the parameter q=1, 2, 3.5 and 8.5. These can guide the fabrication of quantum devices based on photonic crystals.
Spot size is an important factor affecting the interaction between laser and single crystal silicon. Different radius millisecond pulsed laser is used to irradiate single crystal silicon. The effects of laser irradiation on large and small spot size, including temperature rise, damage area and damage morphology, are compared and analyzed. The influence rule of spot size on laser-induced single crystal silicon is determined and its mechanism is analyzed. The results show that the peak temperature of the laser irradiation center point is higher when the spot radius is 0.2 cm than when the spot radius is 0.1 cm; the damage area of single crystal silicon increases with the increase of laser energy density; the damage threshold decreases with the increase of laser spot size, and increases with the increase of pulse width.
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