A simple fabrication technique for simultaneously making a series of large-scale graphene field-effect transistors on Si-substrate with suspended active channel is proposed. This technique is focused on two aspects: 1) preventing the degradation of electrical properties of graphene active channel by defects and chemical residues between graphene and substrate, and 2) proposing simpler fabrication methods of generating many suspended FET devices on a large-scale substrate. To maintain structural integrity of fabricated devices while minimize electrical degradation, we employed a sandwich method, realizing 76% fabrication yield that is higher than other proposed methods of fabricating suspended active channel style FET devices. As our method has a mechanically stable structure, it can be imposed to make electrical devices with various two–dimensional (2D) materials. Our method can also be applied to the engineering of future devices in various applications because a large amount of electrically clean samples can be manufactured at once.
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