Amorphous silicon base d thin film transistors can be used to produce low cost, high quality, reliable active matrix OLED (AMOLED) displays. These displays can also be made on flexible plastic because the fabrication process does not need high temperatures. However, this material has the drawbacks of low electron mobility and defect metastability, which are a major hurdle in AMOLED applications. This paper presents and discusses pixel architectures and driver circuits that can overcome these drawbacks and make a -Si:H based active matrix OLED displays more efficient and reliable.
In this paper, we investigate the threshold voltage (VT) instability in a-Si:H TFTs subject to constant current stress. The gate voltage under such conditions continuously adjusts to keep the drain current constant. As such, existing voltage stress models fail to predict the resulting VT-shift. We propose a physically based model to predict VT-shift under current stress. The model follows a power law assuming that the VT-shift under moderate current stress is due to defect state creation in a-Si:H bulk and interfaces. Good agreement between simulation results and experimental data is obtained for various levels (2μA-15μA) of stress current at both room and elevated (75°C) temperatures.
This paper reviews design considerations pertinent to amorphous silicon (a-Si:H) thin film transistor (TFT) based drive circuits for active matrix organic light emitting diode (AMOLED) displays. Critical design and performance issues related to the a-Si:H TFT are described along with the optimisation of pixel circuit parameters for high lifetime, low power, high resolution, and high frame rate AMOLED displays.
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