Ms. Lihua Gao Profile

Lihua Gao

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Proceedings Article | 29 December 2022 Open Access

Coordination technology of design data based on data space

Mingming Dong, Bo Li, Lihua Gao

Proceedings Volume 12506, 125064J (2022) https://doi.org/10.1117/12.2662186

KEYWORDS: Computer aided design, Data modeling, Databases, Associative arrays, Data storage, Data processing, Data conversion

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Product design is most creative stage in product development process, and it can be regarded as a process that generating new data based on the accumulated data. Therefore, reusing existing design data is critical to the product design process. In order to support different design activities, a variety of design support systems need to be used in the design process. However, there is currently no design data interaction bus between different design support systems. Design data need to be accessed and operated in a point-to-point manner, management and reuse is very difficult. Aiming at this problem, this paper proposes a design data coordination technology based on the analysis of the relationship between design data and design support systems, which takes the data space as the design data interaction bus. This paper analyses the construction method and working principle of the data space, and uses the overall design process of the tank to verify. The example proves that coordination technology based on data space can realize the rapid interaction and reuse of design data.

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Proceedings Article | 25 April 2022 Paper

The evaluation of chipping on single-crystal silicon carbide (SiC) dicing machining using sintered diamond blades

Ping Wang, Mian Li, Lihua Gao, Hui Meng, Dekui Mu

Proceedings Volume 12244, 122440F (2022) https://doi.org/10.1117/12.2634895

KEYWORDS: Wafer dicing, Silicon carbide, Diamond, Abrasives, Semiconducting wafers, Diamond machining, Manufacturing

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Due to its superior bandwidth, high thermal and electrical conductivity, single-crystal SiC is becoming one of the most commonly employed third-generation wafer materials that are essential for the fabrication of powdered electronic devices. This work presents an experimental investigation on the role of processing parameters in the dicing process of silicon carbide (SiC) wafers. Metal bond diamond blades were successfully sintered and utilized to dice single-crystal SiC along with[1120] and the [1100] directions. Dicing quality was evaluated based on the average chipping size and distribution, as well as the relative Kerf defined as the ratio of kerf width to thickness of diamond blades. Single-crystal SiC diced in [1120] direction had quality better than that diced in the [1100] direction. During SiC dicing process, the chip size on the edge of the dicing groove and the relative kerf width increased with the increase of cutting depth. Increased dicing loads could result in the truncation of diamond abrasives, the smaller the difference in protrusion height, and the lower the chipping. Last but not least, the thickness was found to play a determinant role in the mechanical integrity and hence dicing capability of sintered diamond blades on SiC; the minimum thickness of sintered diamond blades was 200 microns.

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