Silicon photodiode integrated with CMOS has been in extensive study for the past ten years due to its wide use in
applications such as short-distance communication, VCD players, ambient light sensors and many other intelligent
systems. In recent years, high speed blue-ray DVD is replacing conventional DVD due to its larger storage capacity and
higher speed. In this work, the photodiode optimized for blue ray is fully integrated with standard 0.35um CMOS
process and the bandwidth dependency upon thermal process and epitaxial material is investigated. It was found that the
additional substrate thermal process can improve bandwidth for blue and red light but reduce bandwidth for infra-red. It
is also found that higher level p-type epi doping does not impact bandwidth for blue light but reduces bandwidth for red
and infra-red. The various mechanisms of bandwidth were discussed based on the experimental results. It indicated that
the bandwidth of photodiodes depends on photo carriers travel time which can be explained by simple model of drift
transport and diffusion transport. The design of photodiode should optimize the depletion region and reduce the carrier
travel time.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.