With its wide application background in biological detection, low-light night vision, lidar, high-energy physics and astronomical observation fields, weak signal detection imaging technology under low illumination has always been a hot spot in the world. Electron bombardment APS (EBAPS) hybrid photodetector is one of the most advanced hybrid devices, which has the advantages of fast response speed, high dynamic range and spatial resolution, digital output. And it can work in low-light environments and even achieve single-photon detection, which is the key development of the next generation of low-light imaging devices at home and abroad. In this study, an EBAPS camera that can image clearly under 10-5lx illumination is reported. Through the research of APS chip backside grinding and chip surface passive film, the detection ability of the device is improved, and a key technical problem in the development of EBAPS is solved.
Non-equilibrium photovoltaic HgCdTe detector with a P+ νN+ structure has been demonstrated to work at high temperature, in which carriers were swept out in a non-equilibrium condition, resulting in a significant decrease of carrier concentration. The P+ -type layer grown by Molecular Beam Epitaxy (MBE) is achieved by arsenic (As) doping, followed by high temperature annealing to activate As. However, due to the annealing temperature is higher than 400 °C, interdiffusion of cations (cadmium (Cd) ion and mercury (Hg) ion) can easily take place in such a high temperature, leading to a higher Cd component and shorter absorption region in the absorber layer, which can ultimately decrease the optical absorption and quantum efficiency of the device. Herein, we proposed a P+G4G3νG2G1N+ heterostructure, which can effectively trap the Cd ions diffusing from the P+ and N+ regions due to the component low-lying area between G4G3 and G2G1. In this work, we firstly investigated the performance using Silvaco, the simulation results indicated that this P+G4G3νG2G1N+ heterostructure can effectively achieve Auger suppression at 200K. High quality and uniform HgCdTe epilayers on CdZnTe substrate were fabricated. The effective thickness of the absorption layer after annealing reduced by more than 1.5 μm due to interdiffusion of the Cd ions in a conventional P+ νN+ structure. In sharp contrast, the effective thickness of the absorption layer after annealing reduced within 0.5 μm in the as-designed P+G4G3νG2G1N+, indicating an inspired way to fabricate high performance HOT non-equilibrium HgCdTe detector.
This paper reported the research of mid-wavelength infrared (MWIR) HgCdTe focal plane arrays (FPAs) detector with high operating temperature (HOT) at Kunming Institute of Physics. The fabrication of detector FPAs was based on high-quality in-situ indium-doped HgCdTe films grown by Liquid Phase Epitaxy (LPE). The p-on-n planar junction devices was fabricated by arsenic ion implantation technology. The HgCdTe chip arrays, and column-level ADC digital Silicon readout integrated circuit (ROIC) were interconnected to hybrid FPAs by flip-chip bonding using indium bumps. The compact and low-heat-leakage Dewar was designed and used to package the hybrid FPAs, and then one Integrated Dewar Cooler Assembly (IDCA) was prepared by coupling low-power miniaturized Stirling cryocooler to the Dewar. The dark current, noise equivalent temperature difference (NETD) and operability of the detector at different operating temperatures were tested. The test results indicated that the detector could work at the temperature above 150K.
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