We report the results of experimental investigation of changes induced by incoherent light with the wavelength of 625
nm in the spectrum of optical absorption in Bi12TiO20:Cd crystal. Semiconductor light diodes emitting quasimonochromatic radiation in red (λ = 625 nm) ranges of the spectrum were used as light sources. It is established that the irradiation of the bismuth titanium oxide crystal by noncoherent light with λ = 625 nm leads to change of a spectrum of optical absorption. In darkness conditions the relaxation of the induced changes proceeds during more than
120 hours. We used a model of light-induced absorption that includes four trap centers having the normal distributions
on the energy for their concentration. This levels are populated by electrons light-exited from donors to the conduction
band. This model makes possible the adequate approximation for spectral dependences of induced absorption, which are
relaxation. The some parameters of defect centers in Bi12TiO20:Cd crystal are determined.
Results of experimental investigations of temperature dependences of optical absorption coefficients and their light-induced
changes for Bi12SiO20, Bi12TiO20:Zn, and Bi12TiO2:Ca crystals are presented. Semiconductor light diodes
emitting quasimonochromatic radiation in red (625 nm), yellow (570 nm), green (505 and 515 nm), and blue (470 nm)
ranges of the spectrum were used as light sources. A theoretical model of thermal- and light-induced changes in the
optical absorption is considered that describes well the observed temperature dependences of the optical absorption for
the Bi12SiO20 and Bi12TiO20:Ca crystals and the dynamics of light-induced changes in light absorption for the
Bi12TiO2:Ca crystal at a wavelength of 470 nm and temperatures in the interval from 24 to 100°C.
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