Dr. Min-hwa Chi Profile

Dr. Min-hwa Chi

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Proceedings Article | 12 October 2016 Paper

Embedded NVM technology at BEOL for 14nm FinFET and beyond

Min-hwa Chi

Proceedings Volume 9818, 981801 (2016) https://doi.org/10.1117/12.2239936

KEYWORDS: Back end of line, Logic, Transistors, Switching, CMOS technology, Electrodes, Ions, Magnetism, Oxides

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As the FinFET technology is state-of-art CMOS platform at 14nm node and beyond, the embedded non-volatile memory (NVM) technologies need to be fully compatible at front-of-line (FEOL) or back-of-line (BEOL), e.g. Phase-Change-RAM (PCRAM), Resistive-RAM (RRAM), Magnetic-RAM (MRAM), and Nanotube-RAM (NRAM). Each NVM technology at BEOL has its own challenges in program power/energy/speed, thermal stability, read/write stability, endurance, scalability, read/write margins, and degradation by Oxidation, thus, a combination of the NVM technologies at BEOL may offer new applications with capability of stacking-up into 3D array. The CNT-based logic and spin-based logic circuits can be integrated in BEOL and lead to powerful 3D-monolithic integration for new applications with high performance and low power.

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