We report our study on the enhanced light extraction efficiency (LEE) of the 280nm AlInN nanowire ultraviolet light-emitting diodes (LEDs) using different surface passivation approaches and photonic crystal structures. With a ~ 30nm Si3N4 as surface passivation, the AlInN LED could achieve relatively high LEE of ~ 41.5%, while the unpassivated LED has an average LEE of ~ 23.5%. Moreover, the periodically arranged nanowire LED arrays in hexagonal structure exhibit high LEE of 61.4% which is almost two times higher compared to that of the randomly arranged nanowire LEDs. Additionally, the AlInN nanowire ultraviolet LEDs show highly transverse-magnetic polarized emission.
We report on the achievement of a new type of ultraviolet light-emitting diodes (LEDs) using AlInN nanowire heterostructures. The molecular beam epitaxial grown AlInN nanowires have relatively high internal quantum efficiency of > 52% at 295nm. The peak emission wavelength is in the range of 280 - 355nm. Moreover, we show that the light extraction efficiency of AlInN nanowire LEDs could reach ~ 63% for hexagonal photonic crystal nanowire structures which is significantly higher compared to the random nanowire arrays. This study provides significant insights into the design and fabrication of new type of high performance AlInN nanowire ultraviolet light-emitters.
Though AlGaN ultraviolet (UV) light-emitting diodes (LEDs) have been explored widely, their performance is still limited in the UV B and C regions due to several challenges. Electron leakage is one of the prominent reasons behind the poor performance of AlGaN deep UV LEDs. This problem can be mitigated by integrating the electron-blocking layer (EBL) between the active region and p-region to an extent, not entirely due to the own disadvantages of the EBL. In this regard, we report the achievement of high-performance EBL free AlGaN LEDs using a strip-in-a-barrier structure operating in the UV B and C regions, particularly at 254 nm and 292 nm wavelengths, respectively. Here, we have engineered each quantum barrier by integrating a 1 nm optimized intrinsic AlGaN strip layer in the middle of the QB. The resulting structure could significantly reduce the electron overflow and enhance the output power by ~1.87 times and ~1.48 times for 254 nm and 292 nm LEDs, respectively, compared to the conventional structure. Moreover, internal quantum efficiency droop is reduced notably in the proposed structure at 254 nm and 292 nm wavelengths.
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