Mr. Osamu Miyahara Profile

Osamu Miyahara

at Tokyo Electron Kyushu Ltd

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Publications (7)

Proceedings Article | 4 December 2008 Paper

Defect transfer from immersion exposure process to etching process using novel immersion exposure and track system

Osamu Miyahara, Hitoshi Kosugi, Shannon Dunn, Youri van Dommelen, Cedric Grouwstra

Proceedings Volume 7140, 71403A (2008) https://doi.org/10.1117/12.804677

KEYWORDS: Etching, Bridges, Lithography, Immersion lithography, Particles, Defect inspection, Double patterning technology, Scanning electron microscopy, Coating, Semiconductors

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Proceedings Article | 22 March 2007 Paper

Defect transfer from immersion exposure process to post processing and defect reduction using novel immersion track system

Osamu Miyahara, Takeshi Shimoaoki, Shinya Wakamizu, Junichi Kitano, Yoshiharu Ono, Shinroku Maejima, Tetsuro Hanawa, Kazuyuki Suko

Proceedings Volume 6519, 651924 (2007) https://doi.org/10.1117/12.711354

KEYWORDS: Etching, Immersion lithography, Photoresist processing, Semiconducting wafers, Lithography, Thin film coatings, Scanning electron microscopy, Defect inspection, Photography, Lens design

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As a promising way to scale down semiconductor devices, 193-nm immersion exposure lithography is being developed at a rapid pace and is nearing application to mass production. This technology allows the design of projection lens with higher numerical aperture (NA) by filling the space between the projection lens and the silicon wafer with a liquid (de-ionized water). However, direct contact between the resist film and water during exposure creates a number of process risks. There are still many unresolved issues and many problems to be solved concerning defects that arise in 193-nm immersion lithography. The use of de-ionized water during the exposure process in 193-nm immersion lithography can lead to a variety of problems. For example, the trapping of microscopic air bubbles can degrade resolution, and residual water droplets left on the wafer surface after immersion exposure can affect resolution in the regions under those droplets. It has also been reported that the immersion of resist film in de-ionized water during exposure can cause moisture to penetrate the resist film and dissolve resist components, and that immersion can affect critical dimensions as well as generate defects. The use of a top coat is viewed as one possible way to prevent adverse effects from the immersion of resist in water, but it has been reported that the same problems may occur even with a top coat and that additional problems may be generated, such as the creation of development residues due to the mixing of top coat and resist. To make 193-nm immersion lithography technology practical for mass production, it is essential that the above defect problems be solved. Importance must be attached to understanding the conditions that give rise to residual defects and their transference in the steps between lithography and the etching/cleaning processes. In this paper, we use 193-nm immersion lithography equipment to examine the transference (traceability) of defects that appear in actual device manufacturing. It will be shown that defect transfer to the etching process can be significantly reduced by the appropriate use of defect-reduction techniques.

Proceedings Article | 29 March 2006 Paper

Defect reduction by using a new rinse solution for 193-nm conventional and immersion lithography

Osamu Miyahara, Takeshi Shimoaoki, Ryoichiro Naito, Kousuke Yoshihara, Junichi Kitano

Proceedings Volume 6153, 61533K (2006) https://doi.org/10.1117/12.656361

KEYWORDS: Photoresist processing, Etching, Immersion lithography, Semiconducting wafers, Lithography, Thin film coatings, Laser processing, Satellites, Scanning electron microscopy, Liquids

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Semiconductor manufacturing technology has progressed remarkably in recent years. This progress has been accompanied by demands to reduce the feature size used in photolithography processing, resulting in a reduction of the exposure wavelength from 248 nm (KrF laser) to 193 nm (ArF laser). ArF immersion lithography is now being actively researched and developed with the aim of implementing the 45-nm technology node. Chemically amplified (CA) resists have been introduced to cope with these reduced feature sizes, making it all the more important to reduce defects produced in the lithography process. In recent years, the behavior of defects in a CA resist has been clarified by studies involving various microprobe analysis techniques. Basically, it has been reported that water-soluble defects such as "satellites" and water-insoluble defects such as "resist residues" are generated by various factors. Furthermore, the reduction in pattern sizes has led to the identification of new types of resist-related defects such as "missing-hole" defects in contact-hole (C/H) patterns and "bridging" defects in line-and-space (L/S) patterns. Although the satellite, resist-residue, and missing-hole problems have been addressed by implementing new ideas such as extended rinse times, improved development recipes, and the introduction of post-development rinse stages and improved rinse recipes, it cannot be said that these measures are sufficient in terms of processing throughput or effectiveness. In this paper, we investigate the effect of adding chemical additives to the de-ionized water (DIW) rinse used in the development rinse process. Our studies confirm that these additives significantly reduce the quantity of minute defects generated on the wafer without degrading lithography performance, and thus help to improve process throughput. We also investigate the application of this method to immersion lithography, and confirm that this additive procedure also reduces the quantity of defects in immersion lithography processes.

Proceedings Article | 14 May 2004 Paper

Improvement of pattern collapse issue by additive-added D.I water rinse process: II

Osamu Miyahara, Keiichi Tanaka, Shinya Wakamizu, Junichi Kitano, Yoshiaki Yamada

Proceedings Volume 5376, (2004) https://doi.org/10.1117/12.534983

KEYWORDS: Etching, Photoresist processing, Standards development, Lithography, Semiconducting wafers, Critical dimension metrology, Scanning electron microscopy, Capillaries, Ions, Silicon

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Proceedings Article | 16 July 2002 Paper

Defect analysis in 157-nm photolithography process

Yukio Kiba, Shinya Hori, Osamu Miyahara, Yuko Ono, Junichi Kitano, Seiro Miyoshi, Takamitsu Furukawa, Toshiro Itani

Proceedings Volume 4689, (2002) https://doi.org/10.1117/12.473505

KEYWORDS: Optical lithography, Lithography, Satellites, Coating, Semiconductors, Chemically amplified resists, Semiconducting wafers, Polymers, Thin films, Metrology

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Proceedings Article | 16 July 2002 Paper

Behavior of chemically amplified resist defects in TMAH solution

Yuko Ono, Osamu Miyahara, Yukio Kiba, Junichi Kitano

Proceedings Volume 4689, (2002) https://doi.org/10.1117/12.473419

KEYWORDS: Particles, Ultraviolet radiation, Semiconducting wafers, Absorption, Absorption filters, Chemically amplified resists, Microfluidics, Photoresist processing, Inspection, Process control

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Proceedings Article | 22 August 2001 Paper

Postdevelopment defect evaluation

Osamu Miyahara, Yukio Kiba, Yuko Ono

Proceedings Volume 4344, (2001) https://doi.org/10.1117/12.436783

KEYWORDS: Satellites, Semiconducting wafers, Silicon, Photoresist processing, Thin film coatings, Inspection, Atomic force microscopy, Defect inspection, Scanning electron microscopy, Polymers

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Showing 5 of 7 publications

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