THz photoconductive antennas (PCAs) have found widespread use in THz generation, detection, and various applications such as sensing, imaging, and communication. For achieving ultrafast operation, most commercially available THz PCAs rely on III-V epitaxial materials due to their high mobility and ultrafast response. However, launching the entire device fabrication process through IC foundries presents significant challenges, thereby limiting the capability of device mass production. In this study, we propose the use of GeSn alloys as the photoconductive material for THz generation. Furthermore, the use of GeSn alloys can potentially offer additional advantages such as cost-effectiveness, scalability, and improved performance.
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