Mr. Ti Ning Profile

Ti Ning

at 11th Research Institute of CETC

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Publications (3)

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Proceedings Article | 5 November 2020 Paper

Analysis on reliability of cooling head in large-array infrared focal plane detector

Xueli Li, Lei Zhang, Ti Ning, Chenggang Wang

Proceedings Volume 11563, 115630D (2020) https://doi.org/10.1117/12.2579724

KEYWORDS: Reliability, Sensors, Infrared detectors, Adhesives, Infrared sensors, Metals, Packaging

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With the development of infrared technology, large-array infrared focal plane detector is getting more and more popular. In order to solve the problem of reduced reliability when the cooling head is packaged with large-array infrared detector, a new design with reinforcement structures on cold platform and cold shield is introduced in this paper. The finite element simulation is used to analyze the optimized structure, and the results show that this design can fully meet the mechanical requirements of the project. By using the reinforcement structures, a Dewar was designed and processed to package a 2.7K×2.7K-15μm large-array infrared detector. After all the packaging process, the total mass of the Dewar is only 800g, and the cooling head is more than 90g. Under the circumstances of a heavy cooling head, the Dewar successfully passed the environmental adaptability assessment, and there is no problem with all the indexes of the infrared focal plane detector, which verified the reliability of the reinforcement structure.

Proceedings Article | 5 November 2020 Paper

Gamma radiation effects on ZnS/CdTe-passivated HgCdTe detectors with different ZnS thickness

Yi Zhang, Junfeng Niu, Jingguo Li, Ti Ning

Proceedings Volume 11563, 1156309 (2020) https://doi.org/10.1117/12.2579540

KEYWORDS: Mercury cadmium telluride, Gamma radiation, Radiation effects, Sensors, Photodetectors, Absorption, Photodiodes, Tolerancing

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At present, HgCdTe arrays has been commonly used in photodetectors for infrared detection in space system, where they are exposed to the space radiation environment. For high radiation-tolerance and the optimum performance of the detector, surface-passivation technology that provides long-term stability is required. Double layer of ZnS/CdTe passivant is most recommendable, because ZnS/CdTe-passivated HgCdTe detectors could show great insulating and radiation-tolerant properties. However, the thickness ratio of ZnS and CdTe layers has not been optimized. In this study, the gamma radiation effects on ZnS/CdTe-passivated mid-wavelength HgCdTe arrays with different ZnS-layer thicknesses were investigated, by analyzing the current-voltage curves before and after gamma irradiation at a very low rate. To our surprise, increase of ZnS thickness from 300 nm to 700 nm dramatically improved the radiation tolerance, although ZnS is considered to be vulnerable to gamma irradiation. We hypothesized that gamma radiation could be strongly absorbed by ZnS with sufficient thickness and the transmitted intensity is harmless to the HgCdTe arrays. Therefore, increase of ZnS thickness could protect the HgCdTe arrays from gamma radiation damage. Here, we presented an efficient and easy processing method to increase radiation-tolerant properties of the high performance HgCdTe photodetectors.

Proceedings Article | 5 November 2020 Paper

Study on the surface treatment process of Hg1-xCdxTe detector

Jiaojiao Qi, Ti Ning, Chunling Li

Proceedings Volume 11563, 115630C (2020) https://doi.org/10.1117/12.2579705

KEYWORDS: Mercury cadmium telluride, Infrared detectors, Etching, Oxides, Infrared sensors, Dry etching

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HgCdTe is significant material prepared infrared detector. Higher performance infrared detector and longer wavelength are vital requirements of the third infrared detector. Device performances of HgCdTe infrared detector and material interface state are inseparable. On the one hand, the HgCdTe lattice is zinc-blende cubic structure, when it is exposed to atmosphere, self-generating oxide layer can be forming on material interface, a good deal of fixed charges are existing in the oxide layer, that can make the device properties degradation seriously. On the other, in the traditional preparation process, epitaxial HgCdTe layer is corroded before surface passivation, material surface could form residual rich tellurium layer. It can also make the device properties degradation on account of recombination centers, increase surface leakage of the device. Based on the above, study on the surface treatment process of HgCdTe detector is very necessary, this paper researched a new method wiping out the self-generating oxide layer and residual rich tellurium layer to obtain a good in function HgCdTe infrared detector. In this way, prepared HgCdTe infrared detector containing cutoff wavelength of 5 μm, 9μm and 12.5 μm, compared HgCdTe infrared detector employing this new method and unused this new method. The former possessed lower dark current, lower noise equivalent temperature difference (NETD) and higher yield. This new method applying to process of HgCdTe infrared detector enhanced the detector properties, lay the foundation of longer wavelength HgCdTe infrared detector.

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