KEYWORDS: Laser ablation, Cadmium, Chemical species, Tellurium, Ions, High power lasers, Plasma, Emission spectroscopy, Laser damage threshold, Thin films
Investigations of parameters of the ablation specie produced by laser ablation from the CdTe targets
were carried out. Optical emission spectroscopy and quadrupole mass spectroscopy methods were used for
measurement of ablation species properties. Quantitative and qualitative parameters of ablation species were
studied by optical emission spectroscopy. The dependences of the velocities of ablation components and they
kinetic energies on the ablation parameters were established, as well. It was found that the ablation of CdTe
targets by laser pulses with threshold power possessed a congruent character. In this case, analysis of mass-spectra
of ablation species generated by high-power laser pulse shown that it was consisted only Cd and Te
atoms, but with various degrees of ionization state. We established that parameters of ablation species have a
strong the dependence on laser pulses regimes and parameters of background ambience.
In order to form flat-panel displays with a high resolution property, the phosphor layer should possess considerable electrical conductivity and thermal stability. Thin phosphor films of zinc silicates, rare earth galats and/or multilayer system on their ground are known to satisfy these very requirements. The authors choose the following compounds of ZnSiO4:Ti, ZnSiO4:Mn, Zn0.4Gd1.6O3:Eu, KGa5O8:Mn with the corresponding color gamma luminescence as the targets for laser pulse deposition based on the above mentioned reasons. The main results on the research physical-technological conditions of the thin phosphor compound film synthesis of the of ZnSiO4:Ti, ZnSiO4:Mn, Zn0.4Gd1.6O3:Eu, KGa5O8:Mn obtained by means of the reactive laser pulse evaporating with the help of quasi-closed reactive ambience are given in this work.
The article sets out to investigate spatial-time and spectral characteristics of laser erosive vapor-plasma torch (EVT), formed at the vaporization of mercury chalcogenines targets. Its influence on the synthesis processes of HgTe and CdHgTe layers, condensed in mercury vapor, is described. It is shown that the laser radiation flux density and Hg vapor pressure in the reaction chamber are dominating factors which determine the character of gas-dynamic spread and EVT composition of mercury chalcogenides targets.
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