III-V compound semiconductor visible-spectrum light-emitting diodes (LEDs) have received much
attention for their important applications in several areas. The AlGaInP semiconductor materials are
capable of emitting light of red and orange, and the InGaN semiconductor materials are capable of
emitting light of green and blue. Those four colors of LED chips are encapsulated with epoxy in same
conditions. In this paper, the junction temperature of power AlGaInP and InGaN LEDs were measured
at different drive current by forward - voltage method .Optical and electrical parameters under different
temperature were also measured. Thermal properties of power AlGaInP and InGaN LEDs were
analyzed for strong dependence of optical and electrical characteristics of power light-emitting diodes
on the diode junction temperature.
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