Mr. Yanxia Guan Profile

Yanxia Guan

at Shenyang Univ of Technology

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Proceedings Article | 14 September 2001 Paper

Purifying of Ar gas in the InSb film sputtering fabrication process

Chengsong Sun, Liwei Wang, Yongguang Wei, Yanxia Guan, Lijun Zhou

Proceedings Volume 4414, (2001) https://doi.org/10.1117/12.440237

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The film's sputtering fabrication has a lot of advantages than other technique. But it meets some difficulty in fabricating InSb film and the oxidation of In is one of them. Because the In among InSb is a kind of active element, and oxygen is in a ionogenic state in sputtering process, the In among InSb is easily oxidized. It will result in that InSb film loses its Hall effect. By analysis, we can find that the oxygen in vacuums mainly comes from the minimal oxygen among Ar gas. The spongy Ti absorbing in high temperature purifying technique was tested then. The temperature should be controlled at 900 degrees C. The purified effect won't be ideal if the temperature is low. The experimental result had been taken Auger electronic spectrum measure and the measured results are presented. The result indicate that the InSb film will not have O₂ if use the Ar gas that had been purified. The results is perfect.

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